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Advances in Silicon Carbide Processing and Applications (Semiconductor Materials and Devices Series)
 
 
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Advances in Silicon Carbide Processing and Applications (Semiconductor Materials and Devices Series) [Hardcover]

Stephen E. Saddow (Editor), Anant Agarwal (Editor)

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Book Description

1580537405 978-1580537407 July 2004
Today sensors are found in everything from consumer goods such as cars and washing machines, to specialized hi-tech equipment used in medicine, aeronautics, and defense. Silicon carbide (SiC) is the material that is revolutionizing sensor technology and driving its use in a multitude of applications. This book is a comprehensive look at this cutting-edge technology and examines the application of SiC sensors in a broad cross section of industries. Leading experts explain the latest advances in manufacturing SiC materials and devices as well as their applications. Researchers and professional engineers alike can find the solutions they need to design and develop SiC sensors. Case studies show how to use innovative SiC technology to provide practical applications and products for industry.

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About the Author

Stephen E. Saddow is an associate professor electrical engineering at the University of South Florida, Tampa, Florida. He earned a Ph.D. in electrical engineering at the University of Maryland, College Park and an M.S. in electrical engineering at Polytechnic University. Anant K. Agarwal is a Senior Scientist at Cree Inc., Durham, North Carolina, managing the development of SiC power devices. He received a Ph.D. degree in Electrical Engineering, in 1984, from the Lehigh University, Bethlehem, Pa and an M.S. in Electrical Engineering, in 1980, from the University of Tennessee.

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Inside This Book (learn more)
First Sentence:
Silicon carbide (SiC) is a semiconductor material with highly suitable properties for high-power, high-frequency, and high-temperature applications. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
channeled implants, seeded sublimation growth, channel packing density, inversion channel mobility, spreading resistance microscopy, implantation temperature, epitaxial emitter, chemical gas sensors, emitter mesa, hydrogen response, sublimation zone, gas response, channeling spectra, implant annealing, collector thickness, emitter structure, blocking voltage, upper diode, antiparallel diodes, common emitter current gain, collector layer, emitter finger, disorder profiles, drift layer, intrinsic gate
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Device Letters, Electron Devices, New York, American Institute of Physics, Lloyd Spetz, Material Science Forum, Bipolar Junction Transistors, Drain Figure, Sensor Properties, Cree Inc, Electronic Materials, Recent Major Advances, Academic Press, Army Research Laboratory, John Wiley, Silane Ambient, Industry Application Conf, Solid-State Electronics, Technical Paper Series, University of South Florida
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