The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.
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First Sentence:
Silicon is by far the most widely used semiconductor material and is likely to remain so for the foreseeable future, although from the perspective of an integrated circuit (IC) designer silicon is hardly a perfect semiconductor. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
uniform composition buffer, germanium mole fraction, electron mobility enhancement, band offset occurs, parasitic barriers, photoresponse characteristics, collector profile, hole confinement, peak transconductance, doping spike, conduction band barrier, bandgap narrowing, pup transistor, maximum oscillation frequency, base transit time, collector current density, bandgap reduction, minimum noise figure, linear transconductance, buffer cap, minority carrier storage, profile engineering, bandgap difference, germanium concentration, gate biases Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Device Lett, Solid-State Electron, Thin Solid Films, Monte Carlo, New York, After Chattopadhyay, Solid-State Circuits, Electrochemical Society, Quantum Electron, After Prinz, Dissertation Princeton University, After Armstrong, Photonics Technol, After Konig, Stanford University, Thesis University of Southampton, Physics of Semiconductor Devices, After Maiti, Cutoff Frequency, Advanced Concepts, After Bopp, After Bouillon, After Hamel, After Larson, After Mathew New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Silicon is by far the most widely used semiconductor material and is likely to remain so for the foreseeable future, although from the perspective of an integrated circuit (IC) designer silicon is hardly a perfect semiconductor. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
uniform composition buffer, germanium mole fraction, electron mobility enhancement, band offset occurs, parasitic barriers, photoresponse characteristics, collector profile, hole confinement, peak transconductance, doping spike, conduction band barrier, bandgap narrowing, pup transistor, maximum oscillation frequency, base transit time, collector current density, bandgap reduction, minimum noise figure, linear transconductance, buffer cap, minority carrier storage, profile engineering, bandgap difference, germanium concentration, gate biases Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Device Lett, Solid-State Electron, Thin Solid Films, Monte Carlo, New York, After Chattopadhyay, Solid-State Circuits, Electrochemical Society, Quantum Electron, After Prinz, Dissertation Princeton University, After Armstrong, Photonics Technol, After Konig, Stanford University, Thesis University of Southampton, Physics of Semiconductor Devices, After Maiti, Cutoff Frequency, Advanced Concepts, After Bopp, After Bouillon, After Hamel, After Larson, After Mathew New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 19
books:
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7
books
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- Semiconductor Devices: Solutions Manual: Physics and Technology by Simon M. Sze on 6 pages
- Physics of Semiconductor Devices by Simon M. Sze on 5 pages
- Design and Realization of Bipolar Transistors (Design And Measurement in Electronic Engineering) by Peter Ashburn on page 25, page 101, and page 150
- New York (Land of Liberty) by Ellen Sturm on page 181 (1), and page 181 (2)
- Bipolar Semiconductor Devices (McGraw-Hill's Core Books) by David J. Roulston on page 103, and page 150
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- Diffractional Optics of Millimetre Waves (Series in Optics and Optoelectronics) by I.V. Minin in Front Matter
- Next Generation Photovoltaics: High Efficiency through Full Spectrum Utilization (Series in Optics and Optoelectronics) by A. Martí in Front Matter
- Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 by R. Szweda on page 402
- Laser-Induced Damage of Optical Materials (Series in Optics and Optoelectronics) by Roger M. Wood in Front Matter
- Handbook of Electroluminescent Materials (Series in Optics and Optoelectronics) by D. R. Vij in Front Matter
See all 7 books citing this book
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