This book is the first to give a comprehensive description of the physics and applications of resonant tunneling diodes. The opening chapters of the book set out the basic principles of coherent tunneling theory. The authors describe in detail the effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution, and intrinsic bistabilities. They review the applications of RTDs, such as in high-frequency signal generation and multi-valued data storage, and close the book with a chapter on the new field of resonant tunneling through laterally confined zero-dimensional structures. Covering all the key theoretical and experimental aspects of this active area of research, the book will be of great value to graduate students of quantum transport physics and device engineering, as well as to researchers in both these fields.
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Book Description
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Book Description
This book is the first to give a comprehensive description of the physics and applications of resonant tunnelling diodes. The opening chapters of the book set out the basic principles of coherent tunnelling theory. Such topics as femtosecond dynamics, non-equilibrium distribution, and intrinsic bistabilities are also described in detail. The applications of RTDs, such as in high-frequency signal generation, are reviewed, and the book closes with a chapter devoted to the new field of RT in low-dimensional structures.
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Inside This Book
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First Sentence:
Recent progress in crystal growth and microfabrication technologies have allowed us to explore a new field of semiconductor device research. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
electron dwell time, total energy dependence, uniform lateral confinement, quantum transport physics, resonant tunnelling structure, implanted gates, tunnelling picture, resonant tunnelling process, tunnelling structures, uniform confinement, transmission probability function, intrinsic bistability, main resonance peak, statistical density matrix, mode incident wave, resonant tunnelling devices, tunnelling model, emitter states, lateral confinement potential, total electron energy, ionised donor, resonant tunnelling diode, resonant tunneling structures, tunnelling diodes, quantum transport theory Key Phrases - Capitalized Phrases (CAPs): (learn more)
After Goodings, Electron Device Lett, New York, Cambridge University, After Mendez, After Nakagawa, Collector Figure, After Reed, Lincoln Laboratory New!
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Recent progress in crystal growth and microfabrication technologies have allowed us to explore a new field of semiconductor device research. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
electron dwell time, total energy dependence, uniform lateral confinement, quantum transport physics, resonant tunnelling structure, implanted gates, tunnelling picture, resonant tunnelling process, tunnelling structures, uniform confinement, transmission probability function, intrinsic bistability, main resonance peak, statistical density matrix, mode incident wave, resonant tunnelling devices, tunnelling model, emitter states, lateral confinement potential, total electron energy, ionised donor, resonant tunnelling diode, resonant tunneling structures, tunnelling diodes, quantum transport theory Key Phrases - Capitalized Phrases (CAPs): (learn more)
After Goodings, Electron Device Lett, New York, Cambridge University, After Mendez, After Nakagawa, Collector Figure, After Reed, Lincoln Laboratory New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
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- Numerical Recipes: The Art of Scientific Computing by William H. Press on page 234
- Mesoscopic Phenomena in Solids by B.L. Altshuler on page 235
- Electronic Transport in Mesoscopic Systems (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) by Supriyo Datta in Front Matter, and page 274
- Trade-Offs in Analog Circuit Design - The Designer's Companion by Chris Toumazou on page 920
- Electrons and Phonons in Semiconductor Multilayers (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) by B. K. Ridley in Front Matter
- Dilute Nitride Semiconductors by Mohamed Henini on page 276
- Plasma Processes for Semiconductor Fabrication (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) by W. N. G. Hitchon in Front Matter
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