High Brightness Light Emitting Diodes, Volume 48 (Semiconductors & Semimetals) (Vol.48) [Hardcover]

Gerald B. Stringfellow (Editor), M. George Craford (Editor), Robert K. Willardson (Series Editor), Eicke R. Weber (Series Editor)

Book Description

ISBN-10: 0127521569 | ISBN-13: 978-0127521565 | Publication Date: October 22, 1997 | Edition: 1st

Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.

Editorial Reviews

About the Author

Stringfellow was among the pioneers of the organometallic vapor phase epitaxial (OMVPE) growth technique, beginning his work in this area in 1975. He has published over 150 papers on this subject and delivered 30 invited papers at national and international conferences during the last 5 years. This work emphasizes the materials science aspects of OMVPE growth, including the thermodynamic and kinetic aspects of the process, the development of new source materials, and the growth of metastable alloys. The first epitaxial layers of InAsSb in the range of solid immiscibility. InPSb, GaPSb, GaInPSb, GaInAsSb, InAsBi, InSbBi, and InAsSbBi, inside the miscibility gap, were produced in Stringfellow's group. The growth of immiscible alloys has led to the discovery of atomic scale ordering in many III/V alloys. He and his students recently demonstrated the control of domain size in these ordered materials by using grooves photolithographically produced on the (001) surface. This had resulted in the largest ordered domains ever produced in semiconductor materials. Current research focuses on the ordering mechanism, particularly the effects of surface structure on ordering.Other important work is involved with the development of new procedures for OMVPE. He and his students pioneered the now widely-used tertiarybutylarsine and tertiarybutylphosphine. They also used several other precursors for the first time, including: ethyldimethylindium, triisopropylantimony, triallylantimony, trivinylantimony, and tertiarybutyldimethylantimony.

Product Details

• Hardcover: 469 pages
• Publisher: Academic Press; 1st edition (October 22, 1997)
• Language: English
• ISBN-10: 0127521569
• ISBN-13: 978-0127521565
• Product Dimensions: 9.1 x 6.2 x 1.1 inches
• Shipping Weight: 1.7 pounds
• Average Customer Review: 5.0 out of 5 stars  See all reviews (2 customer reviews)
• Amazon Best Sellers Rank: #4,309,718 in Books (See Top 100 in Books)

Customer Reviews

Most Helpful Customer Reviews

1 of 1 people found the following review helpful:

5.0 out of 5 stars Good Overview, August 3, 2000

By 

Todd Tolliver (Amherst, MA USA) - See all my reviews

This review is from: High Brightness Light Emitting Diodes, Volume 48 (Semiconductors & Semimetals) (Vol.48) (Hardcover)

This book is a great reference for the topics of high-brightness LEDs. Although the section for nitride based LEDs is slightly dated (1997), the entire book is a great review of the recent history of the development of high-brightness LEDs. It also has a great chapter on applications for the LED and its future markets. I recommend it for anyone who wishes an all encompasing source for recent LED progress.

5.0 out of 5 stars Good review., August 3, 2000

By 

Todd R Tolliver (Amherst, MA USA) - See all my reviews

This review is from: High Brightness Light Emitting Diodes, Volume 48 (Semiconductors & Semimetals) (Vol.48) (Hardcover)

This book is a great reference for the topics of high-brightness LEDs. Although the section for nitride based LEDs is slightly dated (1997), the entire book is a great review of the recent history of the development of high-brightness LEDs. It also has a great chapter on applications for the LED and its future markets. I recommend it for anyone who wishes an all encompasing source for recent LED progress.