Delta-doping of Semiconductors [Paperback]

E. F. Schubert (Editor)

Book Description

ISBN-10: 0521017963 | ISBN-13: 978-0521017961 | Publication Date: August 22, 2005

Doping profiles are a key element in the development of modern semiconductor technology. This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. After an introductory chapter sets out the basic theoretical and experimental concepts involved, the authors discuss the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth. They then present the techniques for characterizing doping distributions, followed by several chapters on the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering.

Editorial Reviews

Book Description

This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. After an introductory chapter setting out the basic concepts involved, fabrication techniques are discussed. in detail. The methods of characterizing doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices.

Product Details

• Paperback: 620 pages
• Publisher: Cambridge University Press (August 22, 2005)
• Language: English
• ISBN-10: 0521017963
• ISBN-13: 978-0521017961
• Product Dimensions: 9.7 x 7.5 x 1.4 inches
• Shipping Weight: 2.3 pounds (View shipping rates and policies)
• Amazon Best Sellers Rank: #3,609,032 in Books (See Top 100 in Books)