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Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors
 
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Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors [Hardcover]

H. Craig Casey (Author)
4.3 out of 5 stars  See all reviews (6 customer reviews)

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Book Description

0471171344 978-0471171348 December 7, 1998 1
A detailed, modern introduction to semiconductors made in silicon and III-V compounds. This book develops the device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Figures and examples based on realistic device parameters are used to illustrate important concepts. The book uses spice tools to analyze complex devices. Design specifications are stressed in building or modeling complicated semiconductor devices.

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Editorial Reviews

From the Back Cover

A detailed introduction of the Si and III-V compound semiconductors As you read through this text, you’ll gain a thorough understanding of the device physics of the Si and III-V compound semiconductors used in integrated circuits. The device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs) are also developed. And the physical understanding of the material is emphasized throughout, with important equations being derived from basic physical concepts. Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Carrier transport and recombination processes are explained in detail and are applied to the description of the pn junction. And the physics of the semiconductor devices are related to the parameters used in Spice, which are illustrated using PSpice examples and problems. Unique features of the text:
  • The physics of semiconductor devices is related to the parameters used in Spice, and detailed instructions are included on PSpice.
  • Circuit applications are given to illustrate the use of the devices and to provide a foundation for subsequent topics in electronic circuits.
  • Includes coverage of topics such as the inversion layer thickness, drain current flow in field-effect transistors after pinch off, and the subthreshold current in MOSFETs.
  • Figures and examples based on realistic device parameters are used to illustrate important concepts.

Product Details

  • Hardcover: 544 pages
  • Publisher: Wiley; 1 edition (December 7, 1998)
  • Language: English
  • ISBN-10: 0471171344
  • ISBN-13: 978-0471171348
  • Product Dimensions: 9.7 x 7.5 x 1 inches
  • Shipping Weight: 2.3 pounds (View shipping rates and policies)
  • Average Customer Review: 4.3 out of 5 stars  See all reviews (6 customer reviews)
  • Amazon Best Sellers Rank: #642,361 in Books (See Top 100 in Books)

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Customer Reviews

6 Reviews
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4 star:
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3 star:
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Average Customer Review
4.3 out of 5 stars (6 customer reviews)
 
 
 
 
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7 of 7 people found the following review helpful:
5.0 out of 5 stars authoritative and up-to-date, March 28, 2000
By 
johare4 (Santa Fe, NM) - See all my reviews
This review is from: Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors (Hardcover)
This book competes with RF Pierret "Semiconductor Device Fundamentals" and BG Streetman "Solid State Electronic Devices". Compared to Pierret there is less reader feedback in terms of review and worked problems. Problems tend to be of the same type and level.

Compared to Streetman (5th Edition) coverage is narrower, without optoelectronic, microwave and power devices. For electrical engineers, this greater focus is rewarded in Casey's book with in-depth introduction to SPICE simulations of all covered devices. For MOSFETs focus is on level 1 and level 2 PSpice, with a description of higher models up to level 6, BSIM3.

In addition to PSpice, the sales point for Casey is physics of device operation. For example, it has solid discussions of intrinsic carrier density (why doesn't simple formula agree with experiment?) and of MOSFET threshold voltage. None of the other books come close for authoritative, basic argument.

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4.0 out of 5 stars generally a nice book, February 26, 2011
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This review is from: Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors (Hardcover)
I used this book for an engineering class. I had a hard time following what's the professor was talking about so I was really dependent on the book. Generally, this is a good book that explains clearly and right to the point. The most important formulas are highlighted and summarized, which is kind of important to me because my primary concern is how to apply the right formula to solve my homework problems. The only thing I dislike it is there's no solution to the problems and thus not suitable for self-study. Also,there are not many examples on how to solve problems.
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3.0 out of 5 stars Device Physics Review, September 24, 2007
This review is from: Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors (Hardcover)
This is a so so book on device physics, I think that there are better ones out there, but it is easy to follow and the problem sets are okay.
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