ESD: Circuits and Devices and over one million other books are available for Amazon Kindle. Learn more


or
Sign in to turn on 1-Click ordering.
or
Amazon Prime Free Trial required. Sign up when you check out. Learn More
Sell Back Your Copy
For a $8.00 Gift Card
Trade in
More Buying Choices
Have one to sell? Sell yours here
ESD: Circuits and Devices
 
 
Start reading ESD: Circuits and Devices on your Kindle in under a minute.

Don't have a Kindle? Get your Kindle here, or download a FREE Kindle Reading App.

ESD: Circuits and Devices [Hardcover]

Steven H. Voldman (Author)
5.0 out of 5 stars  See all reviews (5 customer reviews)

List Price: $150.00
Price: $123.23 & this item ships for FREE with Super Saver Shipping. Details
You Save: $26.77 (18%)
  Special Offers Available
o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o
In Stock.
Ships from and sold by Amazon.com. Gift-wrap available.
Only 3 left in stock--order soon (more on the way).
Want it delivered Tuesday, January 31? Choose One-Day Shipping at checkout. Details
Textbook Student FREE Two-Day Shipping for Students. Learn more

Formats

Amazon Price New from Used from
Kindle Edition $110.91  
Hardcover $123.23  
Paperback --  
Sell Back Your Copy for $8.00
Whether you buy it used on Amazon for $80.00 or somewhere else, you can sell it back through our Book Trade-In Program at the current price of $8.00.
Used Price$80.00
Trade-in Price$8.00
Price after
Trade-in
$72.00

Book Description

0470847549 978-0470847541 January 2, 2006 1
The scaling of semiconductor devices from sub-micron to nanometer dimensions is driving the need for understanding the design of electrostatic discharge (ESD) circuits, and the response of these integrated circuits (IC) to ESD phenomena.

ESD Circuits and Devices provides a clear insight into the layout and design of circuitry for protection against electrical overstress (EOS) and ESD.  With an emphasis on examples, this text:

  • explains ESD buffering, ballasting, current distribution, design segmentation, feedback, coupling, and de-coupling ESD design methods;
  • outlines the fundamental analytical models and experimental results for the ESD design of MOSFETs and diode semiconductor device elements, with a focus on CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe) technology;
  • focuses on the ESD design, optimization, integration and synthesis of these elements and concepts into ESD networks, as well as applying within the off-chip driver networks, and on-chip receivers; and
  • highlights state-of-the-art ESD input circuits, as well as ESD power clamps networks.

Continuing the author’s series of books on ESD, this book will be an invaluable reference for the professional semiconductor chip and system ESD engineer.  Semiconductor device and process development, quality, reliability and failure analysis engineers will also find it an essential tool.  In addition, both senior undergraduate and graduate students in microelectronics and IC design will find its numerous examples useful.


Special Offers and Product Promotions

  • Buy $50 in qualifying physical textbooks, get $5 in Amazon MP3 Credit. Here's how (restrictions apply)

Frequently Bought Together

ESD: Circuits and Devices + ESD: Failure Mechanisms and Models + Latchup
Price For All Three: $398.19

Show availability and shipping details

Buy the selected items together
  • In Stock.
    Ships from and sold by Amazon.com.
    This item ships for FREE with Super Saver Shipping. Details

  • ESD: Failure Mechanisms and Models $124.96

    In Stock.
    Ships from and sold by Amazon.com.
    This item ships for FREE with Super Saver Shipping. Details

  • Latchup $150.00

    In Stock.
    Ships from and sold by Amazon.com.
    This item ships for FREE with Super Saver Shipping. Details


Customers Who Bought This Item Also Bought


Editorial Reviews

From the Back Cover

The scaling of semiconductor devices from sub-micron to nanometer dimensions is driving the need for understanding the design of electrostatic discharge (ESD) circuits, and the response of these integrated circuits (IC) to ESD phenomena.

ESD Circuits and Devices provides a clear insight into the layout and design of circuitry for protection against electrical overstress (EOS) and ESD.  With an emphasis on examples, this text:

  • explains ESD buffering, ballasting, current distribution, design segmentation, feedback, coupling, and de-coupling ESD design methods;
  • outlines the fundamental analytical models and experimental results for the ESD design of MOSFETs and diode semiconductor device elements, with a focus on CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe) technology;
  • focuses on the ESD design, optimization, integration and synthesis of these elements and concepts into ESD networks, as well as applying within the off-chip driver networks, and on-chip receivers; and
  • highlights state-of-the-art ESD input circuits, as well as ESD power clamps networks.

Continuing the author’s series of books on ESD, this book will be an invaluable reference for the professional semiconductor chip and system ESD engineer.  Semiconductor device and process development, quality, reliability and failure analysis engineers will also find it an essential tool.  In addition, both senior undergraduate and graduate students in microelectronics and IC design will find its numerous examples useful.

About the Author

Dr. Steven H. Voldman received his B. S. in Engineering Science from the University of Buffalo (1979); M.S. EE (1981) and Electrical Engineer Degree (1982) from M.I.T.; MS Engineering Physics (1986) and Ph.D. EE (1991) from the University of Vermont under IBM Resident Study Fellow program. At M.I.T., he worked as a member of the M.I.T. Plasma Fusion center, and the High Voltage Research Laboratory (HVRL). At IBM, as a reliability/device engineer, his work included pioneering work in bipolar/CMOS SRAM alpha particle and cosmic ray SER simulation, MOSFET gate-induced drain leakage (GIDL) mechanism, hot electron, epitaxy/well design, CMOS latchup, and ESD. Since 1986, he was responsible for defining the IBM ESD/latchup strategy for CMOS, SOI, BiCMOS and RF CMOS, and SiGe technologies. He has authored ESD and latchup publications in the area of MOSFET scaling, device simulation, copper, low-k, MR heads, CMOS, SOI, SiGe and SiGeC technology. Voldman served as SEMATECH ESD Working Group Chairman (1996–2000), ESD Association Technical Program Chair (2000), Vice Chairman (2001), General Chairman 2002, and ESDA Board of Directors (1998–2006), International Reliability Physics Symposium ESD/Latchup Sub-Committee Chairman (2002–2006), International Physical and Failure Analysis (IPFA) Symposium ESD Sub-Committee Chairman (2003–2005), ESD Association Standard Development Chairman on Transmission Line Pulse Testing (2000–2006), ESD International Committee on Education (ICE) Asian University Liason and “ESD on Campus” program founder, and serves in the ISQED Committee, Taiwan ESD Conference (T-ESDC) Technical Program Committee (Hsinchu, Taiwan), and the International Conference on Electromagnetic Compability (ICEMAC, Taipei, Taiwan). Voldman has provided ESD lectures for universities (e.g., M.I.T. Lecture Series, Taiwan National Chiao-Tung University (NCTU), and Singapore Nanyang Technical University (NTU)). He is a recipient of over 136 U.S. patents, over 100 publications, and recently wrote a textbook on ESD entitled ESD: Physics and Devices (John Wiley and Sons, Ltd) as well as contributing to the text “Silicon Germanium: Modeling, Technology and Simulation,” and providing talks on patenting and invention. He has been highlighted in EE Times, Intellectual Property Law and Business and authored the first article on ESD phenomena for the October 2002 edition of Scientific American entitled “Lightning Rods for Nano-electronics,” and Pour La Science, Le Scienze, and Swiat Nauk International editions. In 2003, Dr. Voldman was accepted as the first IEEE Fellow for ESD phenomena in semiconductors for “contributions to electrostatic discharge protection in CMOS, SOI, and SiGe technologies.”

Product Details

  • Hardcover: 412 pages
  • Publisher: Wiley; 1 edition (January 2, 2006)
  • Language: English
  • ISBN-10: 0470847549
  • ISBN-13: 978-0470847541
  • Product Dimensions: 9.9 x 6.8 x 1.1 inches
  • Shipping Weight: 1.4 pounds (View shipping rates and policies)
  • Average Customer Review: 5.0 out of 5 stars  See all reviews (5 customer reviews)
  • Amazon Best Sellers Rank: #1,124,648 in Books (See Top 100 in Books)

More About the Author

Discover books, learn about writers, read author blogs, and more.

 

Customer Reviews

5 Reviews
5 star:
 (5)
4 star:    (0)
3 star:    (0)
2 star:    (0)
1 star:    (0)
 
 
 
 
 
Average Customer Review
5.0 out of 5 stars (5 customer reviews)
 
 
 
 
Share your thoughts with other customers:
Most Helpful Customer Reviews

2 of 2 people found the following review helpful:
5.0 out of 5 stars Great series for ESD education, January 18, 2008
By 
Chen (California, USA) - See all my reviews
This review is from: ESD: Circuits and Devices (Hardcover)
This book, ESD: Circuits and Devices, is part of a 3-book series on Electrostatic Discharge (ESD) by the same author (Steven Voldman).

One of the main strengths of this series (and there are very many) is that this is very recently published with new and updated datapoints, not to mention being the only series of ESD textbook. Essentially, this means that all the latest developments in the field is published in an easy-to-understand series.

In this book, Voldman writes about the design of ESD protection circuits in his unique style which is illuminating both for experts and beginners alike. I highly recommend this book series to all students of integrated circuit design and ESD.
Help other customers find the most helpful reviews 
Was this review helpful to you? Yes No


1 of 1 people found the following review helpful:
5.0 out of 5 stars A very useful ESD book about devices and circuits, January 23, 2008
By 
lalafa (Orlando, Florida, USA) - See all my reviews
This review is from: ESD: Circuits and Devices (Hardcover)
I have already had this book for a while. This one is the second book of the author's ESD book series which cover the most comprehensive topics related to ESD protection comparing with other ESD books. It is one of the most recently published ESD books with new and updated date points and the latest developments in the field. The thing I like most is, just like the name (circuits and devices) of the book, it not only takes the ESD protection devices as topics to present all the ESD design issues, but also takes the circuit applications as topics to discuss the concerns of ESD design, which gives you the picture that only with good individual ESD protection devices, the successful full-chip ESD solution is not automatic. It is a useful book for both designers and device engineers. I always keep it at hand for my ESD design projects.
Help other customers find the most helpful reviews 
Was this review helpful to you? Yes No


5.0 out of 5 stars Highly recommended to circuit designers and students, February 20, 2011
This review is from: ESD: Circuits and Devices (Hardcover)
This is one of the best books on ESD. All the major ESD building blocks and issues are fully investigated and elegantly written. A perfect balance between circuit and device is an important feature of this book. This is the second book of this series and the author obviously devoted a tremendous amount of time and effort to the writing. The treatment is comprehensive enough to make this book the textbook for an ESD course. It's worth noting that the author is a world expert on ESD and integrated circuit technologies, and was named an IEEE fellow for his contributions in these areas. It's great that he shared lots of valuable knowledge, design experience and deep insights. Chapters 3 and 4 help readers quickly gain solid understanding of the two key elements in ESD design domain: MOSFET and diodes. The chapters on driver, receiver, and power clamp help complete the knowledge of ESD building blocks. All these chapters are written from circuit design perspective rather than pure device physics. Chapters focusing on SOI are a big plus. There are plenty of helpful illustrations in this book, and the perfect number of equations to enhance readers understanding. Please consider using this as your first book to read in ESD. You will keep referring to this book many years from now. Engineers with lots of experience would find this book very useful as well.
Help other customers find the most helpful reviews 
Was this review helpful to you? Yes No

Share your thoughts with other customers: Create your own review
 
 
 
Most Recent Customer Reviews



Only search this product's reviews



Inside This Book (learn more)
First Sentence:
In the field of electricity, electrostatics, and circuit theory, there are many discoveries and accomplishments that have lead to the foundation of the field of electrostatic discharge (ESD) phenomenon. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
resistor ballasting, bipolar current gain, active clamp network, latchup robustness, power clamp network, silicide block mask, power clamps, input signal pad, gated diode structure, bipolar power clamp, diode string network, time constant hierarchy, electromagnetic transit time, electrostatic discharge protection circuits, leakage amplification, electromagnetic wave transit time, mixed voltage interface, pnp current gain, power grid environment, bootstrap element, diode stages, pnp element, diode perimeter, keeper network, dopant polarity
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Proceedings of the Electrical Overstress, John Wiley, Electron Devices, Positive Vss, Vss Figure, New York, Technical Digest, Journal of Electrostatics, International Electron Device Meeting, Invited Talk, Circuit Pad, Negative Vss, Proceeding of the Electrical Overstress, Kluwer Academic Publishers, Polarity Reference Failure, Microelectronics Reliability, International Standard, Proceedings of the Electrostatic Overstress, Series Diode Strings, Technology Disclosure Bulletin, Automotive Electronics Council, Electron Device Letters, Journal of Solid State Circuits, Positive Gate, Proceeding of the Electrostatic Overstress
New!
Books on Related Topics | Concordance | Text Stats
Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Surprise Me!
Search Inside This Book:




What Other Items Do Customers Buy After Viewing This Item?


Tags Customers Associate with This Product

 (What's this?)
Click on a tag to find related items, discussions, and people.
 
(1)

Your tags: Add your first tag
 

Customer Discussions

This product's forum
Discussion Replies Latest Post
No discussions yet

Ask questions, Share opinions, Gain insight
Start a new discussion
Topic:
First post:
Prompts for sign-in
 


Active discussions in related forums
Search Customer Discussions
Search all Amazon discussions
   
Related forums


Listmania!


Create a Listmania! list

So You'd Like to...


Create a guide


Look for Similar Items by Category


Look for Similar Items by Subject