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Electronic Properties of Semiconductor Interfaces (Springer Series in Surface Sciences)
 
 
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Electronic Properties of Semiconductor Interfaces (Springer Series in Surface Sciences) [Hardcover]

Winfried Mönch (Author)

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Book Description

3540202153 978-3540202158 March 5, 2004 1

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.


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Editorial Reviews

Review

From the reviews:

"This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. … The originality of Mönch is more in the fact that he uses the interface-induced gap stats (IFIGS) as the unifying concept of his book. … Altogether, the present book will be very helpful for theorists in the field of semiconductor interface science." (Michel Wautelet, Physicalia, Vol. 28 (4-6), 2006)

From the Back Cover

Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as the unifying concept, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.


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Inside This Book (learn more)
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
extrinsic interface dipoles, dielectric band gap, virtual gap states, semiconductor electronegativities, increasing ideality factors, photoemission yield spectroscopy, electronic interface states, experimental barrier heights, metal electronegativity, effective harrier heights, lowered barrier height, reduced barrier height, constant barrier height, effective barrier heights, interface donors, interface doping, electronegativity concept, semiconductor side, metal adatoms, homogeneous contacts, interface defects, band lineup, symbols differentiate, interface dielectric, semiconductor heterostructures
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Pressure Effects, Test of the Patch Concept, Three-Dimensional Model, Substrate Metal Interface, Determination of Band Offsets, Origin of Lateral Barrier-Height Inhomogeneities, Schottky Mott
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