The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.
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In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.
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The recent development of ferroelectric random access memories (FeRAMs) has shown that extremely high-density ferroelectric memory devices (ULSI) will become commercially feasible within the next few years [1,2,3]. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
dielectric microscopy, paraelectric layer, cell size factor, ferroelectric capacitor, nanoscale capacitors, piezoresponse images, dielectric imaging, data retention characteristics, ferroelectric film, switchable polarization, contactless interface, ferroelectric random access memories, ferroelectric thin films, polarization fatigue, remanent polarization, nanoscale phenomena, switched charge, imprint characteristics, leakage current density, ferroelectric memory, depolarization field, ferroelectric switching, polarization reversal, operational voltage, ferroelectric properties Key Phrases - Capitalized Phrases (CAPs): (learn more)
Paz de Araujo, Solid-State Circuits Conf, Springer-Verlag Berlin Heidelberg, Electron Devices Meeting, Curie von Schweidler, Frenkel Poole, New York, San Francisco, Sawyer Tower, Colorado Springs, Excessive Length, Tokyo Institute of Technology New!
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The recent development of ferroelectric random access memories (FeRAMs) has shown that extremely high-density ferroelectric memory devices (ULSI) will become commercially feasible within the next few years [1,2,3]. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
dielectric microscopy, paraelectric layer, cell size factor, ferroelectric capacitor, nanoscale capacitors, piezoresponse images, dielectric imaging, data retention characteristics, ferroelectric film, switchable polarization, contactless interface, ferroelectric random access memories, ferroelectric thin films, polarization fatigue, remanent polarization, nanoscale phenomena, switched charge, imprint characteristics, leakage current density, ferroelectric memory, depolarization field, ferroelectric switching, polarization reversal, operational voltage, ferroelectric properties Key Phrases - Capitalized Phrases (CAPs): (learn more)
Paz de Araujo, Solid-State Circuits Conf, Springer-Verlag Berlin Heidelberg, Electron Devices Meeting, Curie von Schweidler, Frenkel Poole, New York, San Francisco, Sawyer Tower, Colorado Springs, Excessive Length, Tokyo Institute of Technology New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 19
books:
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- Physics of Semiconductor Devices by Simon M. Sze on page 15, and page 192
- Semiconductor Devices: Solutions Manual: Physics and Technology by Simon M. Sze on page 15, and page 192
- Infrared Holography for Optical Communications (Topics in Applied Physics) by Pierpaolo Boffi in Back Matter
- Carbon Nanotubes: Synthesis, Structure, Properties and Applications by Mildred S. Dresselhaus in Back Matter
- Principles and Applications of Ferroelectrics and Related Materials (Oxford Classic Texts in the Physical Sciences) by M. E. Lines on page 44
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