Fundamentals of Carrier Transport explores the behavior of charged carriers in semiconductors and semiconductor devices for readers without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices and coverage of "full band" transport. Lundstrom also covers both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. He explains in detail the use of Monte Carlo simulation methods and provides many homework exercises along with a variety of worked examples. What makes this book unique is its broad theoretical treatment of transport for advanced students and researchers engaged in experimental semiconductor device research and development.
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Book Description
Editorial Reviews
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"The book is beautifully produced, the author's style is lucid and easy to read and the arguments and physical insights as clear and helpful as one could wish." Contemporary Physics
"An extensive treatment of semiconductor transport." Professor J.D. Bird, Arizona State University
"An extensive treatment of semiconductor transport." Professor J.D. Bird, Arizona State University
Book Description
Fundamentals of Carrier Transport is an accessible introduction to the behavior of charged carriers in semiconductors and semiconductor devices. It is written specifically for engineers and students without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices. The book will be of great interest to graduate students of electrical engineering and applied physics. It will also be invaluable to practising engineers working on semiconductor device research and development.
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10 of 10 people found the following review helpful:
4.0 out of 5 stars
It's a quantum world...,
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This review is from: Fundamentals of Carrier Transport (Hardcover)
There was a time when all a good semiconductor device engineer had to know was the drift-diffusion, Poisson, and continuity equations to model devices, with the Boltzmann transport equation having only made a brief cameo in one's life during a grad school course in Ashcroft and Mermin or some other solid state physics book. With shrinking device dimensions, those days are gone. Lundstrom, a Purdue professor, has written a fairly understandable book (though not easy) describing energy and momentum balance, Monte Carlo methods, and other tools of transport theory. I gave it 4 stars only because I found the notation and style a bit formal for an EE (although a solid state physics student would probably be right at home). On the plus side, there are some interesting topics not normally seen. For example, I believe this may be the only in-print textbook that has a derivation of Van der Pauw's equation for resistivity measurements used in Hall mobility tests by almost every epitaxial growth engineer/scientist on a daily basis. Overall, well worth the money.
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Inside This Book
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First Sentence:
Conventional device analysis begins by assuming that carriers behave as classical particles which obey Newton's laws. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
common scattering mechanisms, composite scattering matrix, ensemble relaxation times, average carrier energy, nonparabolic energy bands, electron temperature model, equivalent intervalley scattering, inversion layer densities, hydrodynamic flow equations, average kinetic energy density, momentum relaxation rate, randomizing scattering, scattered carriers, semiclassical transport, average carrier velocity, balance equation approach, average carrier density, high applied fields, drift energy, transport tensors, optical deformation potential, temperature tensor, high energy carriers, inversion layer mobility, power law scattering Key Phrases - Capitalized Phrases (CAPs): (learn more)
Monte Carlo, New York, Solid-State Electronics, Golden Rule, Academic Press, Position Fig, Journal of Applied, Pergamon Press, Law of the Junction, Englewood Cliffs, General Theory, Modular Series, Quantum Phenomena New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Conventional device analysis begins by assuming that carriers behave as classical particles which obey Newton's laws. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
common scattering mechanisms, composite scattering matrix, ensemble relaxation times, average carrier energy, nonparabolic energy bands, electron temperature model, equivalent intervalley scattering, inversion layer densities, hydrodynamic flow equations, average kinetic energy density, momentum relaxation rate, randomizing scattering, scattered carriers, semiclassical transport, average carrier velocity, balance equation approach, average carrier density, high applied fields, drift energy, transport tensors, optical deformation potential, temperature tensor, high energy carriers, inversion layer mobility, power law scattering Key Phrases - Capitalized Phrases (CAPs): (learn more)
Monte Carlo, New York, Solid-State Electronics, Golden Rule, Academic Press, Position Fig, Journal of Applied, Pergamon Press, Law of the Junction, Englewood Cliffs, General Theory, Modular Series, Quantum Phenomena New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 18
books:
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27
books
cite this book:
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- Quantum Phenomena (Modular Series on Solid State Devices, Vol 8) by Supriyo Datta on 4 pages
- The Neural Crest and Neural Crest Cells in Vertebrate Development and Evolution (SPRINGER SERIES IN SOLID-STATE SCIENCES) by Brian K. Hall on page 49, page 61, and page 311
- Kinetic Equations by Richard Liboff on page 154, and page 242
- Semiconductor Devices: Solutions Manual: Physics and Technology by Simon M. Sze in Front Matter, and page 359
- Semiconductor Devices by Heath Company on page 359
See all 18 books this book cites
- Electronic and Optoelectronic Properties of Semiconductor Structures by Jasprit Singh on 7 pages
- Simulation of Semiconductor Processes and Devices 2004: SISPAD 2004 by Gerhard Wachutka on page 7, and page 112
- Nanoscale Transistors: Device Physics, Modeling and Simulation by Mark Lundstrom on page 38, and page 138
- High-Speed Heterostructure Devices: From Device Concepts to Circuit Modeling by Patrick Roblin on page 310, and page 648
- Advanced Device Modeling and Simulation (Selected Topics in Electronics and Systems, 31) by Tibor Grasser on page 69, and Back Matter
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