Mark Lundstrom, Purdue University
"I have taught a few VLSI device courses with the 1st edition as a textbook. Those were enjoyable experiences and the book was well received by students. Now the second edition comes with timely updates and two new chapters, which continue the tradition of emphasizing the design aspects of modern VLSI devices. I strongly recommend this book as a text or a reference in semiconductor device courses."
Byung-Gook Park, Seoul National University
"Fundamentals of Modern VLSI Devices, by Taur and Ning, has been an important reference text for our graduate semiconductor device physics course at UC Berkeley for several years. It provides a well-written review of the operation of MOSFETs and BJTs. The new edition expands on this by introducing major new topics related to memories, silicon on insulator devices, and scale length and high field modeling as applied to MOSFETs. By including this material, this text is now positioned to be the primary text for typical graduate device physics courses, and will meet the needs of both students and instructors through it's combination of detailed, well-written, and easy to follow descriptions of device operation, coupled with exercises and assignments for testing understanding of the relevant course material."
Vivek Subramanian, UC Berkeley
"This second edition of Fundamentals of Modern VLSI Devices builds on the tremendous success enjoyed by the original book. It provides well-organized and in-depth discussions on all relevant aspects of modern MOSFET and BJT devices, with an excellent balance of physics and mathematics. Every chapter is revised to reflect advances in VLSI devices in the last 10 years since the publication of the original book. Two new chapters on memory and silicon-on-insulator devices have been included along with nine additional appendixes. The problems at the end of each chapter are carefully designed and serve to help the readers better understand the key concepts."
Wei Lu, University of Michigan