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Fundamentals of Modern VLSI Devices 2nd Edition

16 customer reviews
ISBN-13: 978-0521832946
ISBN-10: 0521832942
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Editorial Reviews


"For the past several years, I've taught from Taur and Ning's book because it's best at connecting advanced device physics to real world device, circuit, and system technology. The second edition updates each chapter, adds new chapters on memory and SOI, doubles the number of appendices, and contains all new homework problems. The best book of its kind is now even better."
Mark Lundstrom, Purdue University

"I have taught a few VLSI device courses with the 1st edition as a textbook. Those were enjoyable experiences and the book was well received by students. Now the second edition comes with timely updates and two new chapters, which continue the tradition of emphasizing the design aspects of modern VLSI devices. I strongly recommend this book as a text or a reference in semiconductor device courses."
Byung-Gook Park, Seoul National University

"Fundamentals of Modern VLSI Devices, by Taur and Ning, has been an important reference text for our graduate semiconductor device physics course at UC Berkeley for several years. It provides a well-written review of the operation of MOSFETs and BJTs. The new edition expands on this by introducing major new topics related to memories, silicon on insulator devices, and scale length and high field modeling as applied to MOSFETs. By including this material, this text is now positioned to be the primary text for typical graduate device physics courses, and will meet the needs of both students and instructors through it's combination of detailed, well-written, and easy to follow descriptions of device operation, coupled with exercises and assignments for testing understanding of the relevant course material."
Vivek Subramanian, UC Berkeley

"This second edition of Fundamentals of Modern VLSI Devices builds on the tremendous success enjoyed by the original book. It provides well-organized and in-depth discussions on all relevant aspects of modern MOSFET and BJT devices, with an excellent balance of physics and mathematics. Every chapter is revised to reflect advances in VLSI devices in the last 10 years since the publication of the original book. Two new chapters on memory and silicon-on-insulator devices have been included along with nine additional appendixes. The problems at the end of each chapter are carefully designed and serve to help the readers better understand the key concepts."
Wei Lu, University of Michigan

Book Description

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The internationally renowned authors highlight the interdependencies and trade-offs between practically important device parameters and discuss device scaling and scaling limits of CMOS and bipolar devices.

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Product Details

  • Hardcover: 680 pages
  • Publisher: Cambridge University Press; 2 edition (August 28, 2009)
  • Language: English
  • ISBN-10: 0521832942
  • ISBN-13: 978-0521832946
  • Product Dimensions: 6.8 x 1.6 x 9.7 inches
  • Shipping Weight: 3.2 pounds
  • Average Customer Review: 4.4 out of 5 stars  See all reviews (16 customer reviews)
  • Amazon Best Sellers Rank: #1,197,604 in Books (See Top 100 in Books)

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Customer Reviews

Most Helpful Customer Reviews

30 of 31 people found the following review helpful By "kenaz-raido" on April 10, 2003
Format: Paperback
The physicist in me wants to give this book 2 stars and the mathemetician in me wants to give it 5 stars, while the engineer and organizer in me wants to give it 4 stars. End result is 4 stars, but frustrated with the linear grading system. Here's a bit more on why.
Yes, as previous reviewers have said, this book gives you what many similarly named books don't: an advanced-level, industrial-view, practioner look at semiconductor device operation and design. It is well organized from that standpoint, which originally drew me in wholeheartedly.
My criticism is that when you really get into it -- and I have, by reading every page from start to finish -- the authors sometimes only use the math equations to explain why things happen. I guess this is okay in some science topics say, for abstract problems in QM matrix formalism when the "thing" is difficult to visualize physically, but this is a working, quasi-classical, real-world "machine"; physical explanations should almost always be possible. Writing about the concepts in addition to the math equations is important because most of us don't remember dozens of math equations day-to-day, but only the relationships often buttressed up by physical pictures. For example, on page 187 an equation (and equations are models of reality themselves containing their own limitations) is used to show (prove?) "the gate work function has a major effect on channel profile design, since, through the V_fb term, it has a strong influence on the MOSFET threshold voltage". In addition to the math symbolic relationship, this could also be said with physical underpinnings or something more physical sounding than "through the V_fb term".
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16 of 16 people found the following review helpful By Carl-Mikael Zetterling ( on May 5, 1999
Format: Paperback
Every year a large number of textbooks are published, many times, unfortunately without contributing anything new to the market. In this case, however, Taur and Ning have written a book that will surely be referenced for many years. Rather than trying to write about every modern electronic device, they concentrate on sub-micron MOS and bipolar transistors in silicon, and do so very well. It is clear that the authors know what they are talking about (they are both IEEE Fellows and long-time employees of IBM). They draw heavily from their experience of industrial VLSI technology, and cover subjects such as device optimization, tradeoffs between power consumption and packing density, and physical limits to scaling. Half the book is dedicated to MOS (including CMOS circuitry) and half to bipolar transistors, but there is also enough basic semiconductor physics for review. This book should be useful for practicing engineers, but the ample amounts of exercises in each chapter is why I use it for teaching a senior undergraduate / first-year graduate course in advanced VLSI devices.
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8 of 9 people found the following review helpful By CDB on January 10, 2002
Format: Hardcover Verified Purchase
This is the best book currently available on device electronics. Written by renown contributors to the field from IBM, it takes the complexity of integrated semiconductor devices down to its first-order, industry-proven essentials. In this respect, "Fundamentals of Modern VLSI Devices" comes in line with what I consider to be the epitoms of the class of lasting transistor books, Alvin Phillips' "Transistor Engineering" (McGraw-Hill 1962) and Andrew Grove's "Physics and Technology of Semiconductor Devices" (Wiley, 1967). The treatment of the subject matter is outstandingly thorough, covering the basic device physics and technology integration of bipolar and field-effect metal-oxide-semiconductor (MOSFET) and highlighting the subtle tradeoffs involved in modern transistor design and optimization. The approach is first-order analytical, with refrainment from the use of computer-simulations tools that would have run the risk of diminishing the teaching strength of the book. Equations and parameters provided are checked continuously against the reality of silicon data. This makes the book invaluably useful in practical transitor design as well as in the classroom. I keep it on my desk at all times. The bipolar-transitor part takes the reader all the way from the classical junction transistor to the modern polysilicon-emitter, SiGe-base variety. The MOSFET part is equally sweeping, coming as far as to the technology node (gate length) of 100 nm. Each chapter concludes with real-life exercises that actually extend the depth of analysis, getting the reader directly involved.
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5 of 5 people found the following review helpful By A Customer on December 18, 1999
Format: Paperback
The book has been very well written and focuses on all the latest aspects of devices. The treatment of Short channels, Scaling are especially good. The problems at the end really give you a feel of things and let you understand the concepts better.
An excellent book for graduate level and a good book for practicing engineers in the semi conductor industry.
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9 of 11 people found the following review helpful By A Customer on August 10, 1999
Format: Paperback
There are two types of books on modern device physcis. One is "textbook" like. They have quite thourough discussion on the physics of different devices. But the topics they discuss is of little relevence to the practicing enginners trying to develop the vlsi technology. Another type is "review" like discussion scatter around different places. They do shed some light on the current issues in vlsi technology development. But often they are concerned with very small details of the issue. For a relative new comer, he/she can easily loss the big picture.
Happiy, Drs. Taur and Ning's book provide thourough yet relevent discussion on the vlsi device physics. Chapters on the basic device physics provide clear understanding of the fundamentals. A grad student or engineer would appreciate the streamlined, well presented theory.
The most important part of the book, in my humble opinion, is the discussion on mosfet and bjt device design and performance factors. These four chapters clearly demonstrate the extensive experience and knowledge authors have in this field. They are all of paramount importance in today's vlsi technology development. I have not seen such in-depth, yet clear discussion on the topics in similar books. Highly recommended!
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