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Fundamentals of Solid State Engineering, 3rd Edition
 
 
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Fundamentals of Solid State Engineering, 3rd Edition [Hardcover]

Manijeh Razeghi (Author)
4.1 out of 5 stars  See all reviews (18 customer reviews)

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Book Description

0387921672 978-0387921679 March 27, 2009 3rd ed.
Provides a multidisciplinary introduction to quantum mechanics, solid state physics, advanced devices, and fabrication Covers wide range of topics in the same style and in the same notation Most up to date developments in semiconductor physics and nano-engineering  Mathematical derivations are carried through in detail with emphasis on clarity  Timely application areas such as biophotonics , bioelectronics

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Editorial Reviews

Review

From the reviews of the third edition: “The subject area of solid state engineering is potentially very complex … . Manijeh Razeghi takes a multi-disciplinary approach to the text to address the requirements for engineers and scientists … . He commendably uses illustrations and worked examples for the benefit of comprehension; this is an excellent and well-rounded book.” (Times Higher Education, December, 2009)

From the Back Cover

Fundamentals of Solid State Engineering, 3rd Edition, provides a multi-disciplinary introduction to solid state engineering, combining concepts from physics, chemistry, electrical engineering, materials science and mechanical engineering. Revised throughout, this third edition includes new topics such as electron-electron and electron-phonon interactions, in addition to the Kane effective mass method. A chapter devoted to quantum mechanics has been expanded to cover topics such as the harmonic oscillator, the hydrogen atom, the quantum mechanical description of angular momentum and the origin of spin. This textbook also features an improved transport theory description, which now goes beyond Drude theory, discussing the Boltzmann approach. Introducing students to the rigorous quantum mechanical way of thinking about and formulating transport processes, this textbook presents the basic physics concepts and thorough treatment of semiconductor characterization technology, designed for solid state engineers.

Product Details

  • Hardcover: 792 pages
  • Publisher: Springer; 3rd ed. edition (March 27, 2009)
  • Language: English
  • ISBN-10: 0387921672
  • ISBN-13: 978-0387921679
  • Product Dimensions: 9.3 x 6.5 x 1.6 inches
  • Shipping Weight: 2.7 pounds (View shipping rates and policies)
  • Average Customer Review: 4.1 out of 5 stars  See all reviews (18 customer reviews)
  • Amazon Best Sellers Rank: #908,386 in Books (See Top 100 in Books)

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Customer Reviews

18 Reviews
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Average Customer Review
4.1 out of 5 stars (18 customer reviews)
 
 
 
 
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Most Helpful Customer Reviews

12 of 17 people found the following review helpful:
1.0 out of 5 stars Worthless piece of literature!, August 26, 2005
This book is truly an example of an over-priced piece of poor quality garbage. The figures look like they have been photo copied, many of the equations and word lines look like a botch job due to poor software during the writing/printing process, and most importantly the method of relaying or teaching the information is very sub-par. I would highly encourage anyone considering buying this book to NOT do so.
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3 of 4 people found the following review helpful:
5.0 out of 5 stars Good book about semiconductor physics and engineering, September 3, 2009
By 
Shigeyuki (Tokyo, Japan) - See all my reviews
This review is from: Fundamentals of Solid State Engineering, 3rd Edition (Hardcover)
The third edition of "Fundamentals of Solid State Engineering" is a good book for not only graduate students but also starters of semiconductor research. This book covers a wide range of fundamentals of semiconductor physics such as point groups, crystal structures, phonons, band structures, electrical properties, optical properties, quantum structures, quantum transport, p-n and metal-semiconductor junctions. These chapters give us the detailed explanations and deep understanding of semiconductor. Moreover, it is striking that this book includes the explanations of "actual" semiconductors. These chapters provide us with an understanding of the growth techniques (Bulk single crystal growth and Epitaxial growth) and semiconductor characterization techniques (structural, optical and electrical characterization techniques). This book can help graduate students to quickly start semiconductor research.
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5 of 7 people found the following review helpful:
5.0 out of 5 stars Review of Fundamantals of Solid State Engineering, September 2, 2009
This review is from: Fundamentals of Solid State Engineering, 3rd Edition (Hardcover)
This third edition provides excellent coverage of a very broad range of topics including: fundamentals of crystalline solids, quantum mechanical properties of atoms, quantum mechanical treatments of the potentials that arise in both traditional and modern semiconductor device structures, energy bands in solids, phonons in solids including important related thermal effects, equilibrium and non-equilibrium electrical properties of semiconductors, p-n junctions, optical properties of semiconductors, electron-electron interactions in solids, modern heterostructures and low-dimensional devices, quantum transport, electron-phonon interactions, modern growth techniques for forefront semiconductor structures and devices, semiconductor characterization, and many other forefront topics. The broad coverage and the emphasis on state-of-the-art topics make this book an exceptional text for the foundational courses in a solid state curriculum.
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Inside This Book (learn more)
First Sentence:
This Chapter gives a brief introduction to crystallography, which is the science that studies the structure and properties of the crystalline state of matter. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
quantum transport, electronic structure, semiconductor heterostructures, semiconductor optics, solid state engineering, semiconductor boules, energy band profile, forward bias case, excess electron concentration, long wave limit, crystal growth techniques, space charge region, harmonic crystal, depletion approximation, energy band structures, diode equation, acoustic phonon branch, nth atom, quantum structures, finite potential, bandgap energy
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Fundamentals of Solid State Engineering, New York, John Wiley, Non-Equilibrium Electrical Properties of Semiconductors, Optical Properties of Semiconductors, Cambridge University Press, Solid State Physics, Crystalline Properties of Solids, Englewood Cliffs, Equilibrium Charge Carrier Statistics, Springer Science, Business Media, Academic Press, Thermal Properties of Crystals, Semiconductor Characterization Techniques, Applied Physics Letters, Francis Group, Physical Review, The Bravais, American Physical Society, Quantum Hall, Oxford University Press, Electron-Electron Interactions, Physics of Semiconductor Devices, Gallium Arsenide
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Front Cover | Table of Contents | First Pages | Index | Surprise Me!
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