The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
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First Sentence:
The interest in III-N materials (stimulated by pioneering work of Pankove, Akasaki, Nakamura, and many others) dates back to 1970s. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
electron affinity model, setback layer, interface diode, fused interface, crystallographic tilt, average carrier energy, room temperature hall mobility, spiral hillocks, weighting pressure, polarity matching, energy stairs, interface dipole, heterostructure field effect transistors, heterogeneous steps, charge neutrality levels, channel cracks, current collapse, emitter cap, wafer fusion, emitter mesa, runaway effect, band alignment, knee voltage, substrate cracking, fused junction Key Phrases - Capitalized Phrases (CAPs): (learn more)
Asif Khan, New York, Monte Carlo, World Scientific Publishing Company, Journal of Applied Physics, Office of Naval Research, Santa Barbara, Applied Physics Letters, Nitride Semicond, University of California, Emitter Surface, John Wiley, North Carolina State University, Electronics Letters, Solid State Electronics, Electron Device Letters, Journal of Crystal Growth, Multidisciplinary University Research Initiative, Properties of Group, Academic Press, Journal of Electronic Materials, Journal of the Electrochemical Society, Photonics Technology Letters, Solid State Commun, Current Aperture Vertical Electron Transistor New!
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Front Cover | Table of Contents | First Pages | Back Cover | Surprise Me!
The interest in III-N materials (stimulated by pioneering work of Pankove, Akasaki, Nakamura, and many others) dates back to 1970s. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
electron affinity model, setback layer, interface diode, fused interface, crystallographic tilt, average carrier energy, room temperature hall mobility, spiral hillocks, weighting pressure, polarity matching, energy stairs, interface dipole, heterostructure field effect transistors, heterogeneous steps, charge neutrality levels, channel cracks, current collapse, emitter cap, wafer fusion, emitter mesa, runaway effect, band alignment, knee voltage, substrate cracking, fused junction Key Phrases - Capitalized Phrases (CAPs): (learn more)
Asif Khan, New York, Monte Carlo, World Scientific Publishing Company, Journal of Applied Physics, Office of Naval Research, Santa Barbara, Applied Physics Letters, Nitride Semicond, University of California, Emitter Surface, John Wiley, North Carolina State University, Electronics Letters, Solid State Electronics, Electron Device Letters, Journal of Crystal Growth, Multidisciplinary University Research Initiative, Properties of Group, Academic Press, Journal of Electronic Materials, Journal of the Electrochemical Society, Photonics Technology Letters, Solid State Commun, Current Aperture Vertical Electron Transistor New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Back Cover | Surprise Me!
Citations (learn more)
This book cites 42
books:
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- Semiconductor Devices: Solutions Manual: Physics and Technology by Simon M. Sze on 4 pages
- Physics of Semiconductor Devices by Simon M. Sze on page 105, page 125, and page 173
- GaAs Devices and Circuits (Microdevices) by Michael S. Shur on page 223, and page 224
- Hot-Electron Transport in Semiconductors (Topics in Applied Physics) by L. Reggiani on page 173, and page 174
- Quantum mechanics: A physical world picture (International series of monographs in natural philosophy) by Antal Muller on page 173
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