The aim of this 3-volume reference is to present accurate, reliable and up-to-date information on the physical properties of group IV elemental semiconductors (Vol. 1), III-V compound semiconductors (Vol. 2) and II-VI semiconductors (Vol. 3). The data on the physical properties of each material are organized in the same way throughout these volumes to facilitate searching for information. The physical properties considered in these volumes can be classified into 12 groups: structural properties; -thermal properties; -elastic properties; -phonons and lattice vibronic properties; -collective effects and related properties; -energy-band structure: energy-band gaps; -energy-band structure: electron and hole effective mass; -electronic deformation potential; -electron affinity and Schottky barrier height; -optical properties; -elastooptic, electrooptic and nonlinear optical properties; and, -carrier transport properties. An extensive bibliography is included for those who wish to find additional information.
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Key Phrases - Statistically Improbable Phrases (SIPs):
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carrier transport properties, cubic silicon carbide, gray tin, electron effective mass, intravalley deformation potential, mobility value, semiconductor parameters, phonon dispersion relation, intervalley deformation potential, satellite valley, elastooptic effect, continued deformation, optical constants, diamond lattice shows, lattice vibronic properties, interband deformation potentials, unit cube volume, cyclotron resonance linewidth, shear deformation potentials, fundamental absorption edge, including recent data, hole drift velocity, drift mobility, metal work function, cyclotron mass Key Phrases - Capitalized Phrases (CAPs): (learn more)
Status Solidi, Solid State Commun, Energy-Band Structure, Hexagonal Silicon Carbide, Kluwer Academic, Optical Properties, Solid-State Electron, Energy-Band Gaps, Boca Raton, New York, Rev Lett, Low-Field Mobility, High-Field Transport, Minority-Carrier Transport, Coefficient Value Comment, World Scientific, Thermal Properties, Parameter Comment, Rhombohedral Silicon Carbide, Parameter Band, Electron Dev, Parameter Value, Elastic Properties, Basic Properties, Handbook Series Browse Sample Pages:
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carrier transport properties, cubic silicon carbide, gray tin, electron effective mass, intravalley deformation potential, mobility value, semiconductor parameters, phonon dispersion relation, intervalley deformation potential, satellite valley, elastooptic effect, continued deformation, optical constants, diamond lattice shows, lattice vibronic properties, interband deformation potentials, unit cube volume, cyclotron resonance linewidth, shear deformation potentials, fundamental absorption edge, including recent data, hole drift velocity, drift mobility, metal work function, cyclotron mass Key Phrases - Capitalized Phrases (CAPs): (learn more)
Status Solidi, Solid State Commun, Energy-Band Structure, Hexagonal Silicon Carbide, Kluwer Academic, Optical Properties, Solid-State Electron, Energy-Band Gaps, Boca Raton, New York, Rev Lett, Low-Field Mobility, High-Field Transport, Minority-Carrier Transport, Coefficient Value Comment, World Scientific, Thermal Properties, Parameter Comment, Rhombohedral Silicon Carbide, Parameter Band, Electron Dev, Parameter Value, Elastic Properties, Basic Properties, Handbook Series Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Back Cover | Surprise Me!
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