Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.
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Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
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Inside This Book
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First Sentence:
High-k dielectrics are a technology landmark so fundamental as to raise important questions about the future economics of the industry. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
silicate alloys, band offset energies, electrostatic integrity, aluminate alloys, silicon body thickness, hole fluence, capacitance equivalent thickness, band offset energy, gate dielectric scaling, advanced gate dielectrics, anode hole injection model, full silicidation, interface electronic states, wave function penetration, oxynitride alloys, boron penetration resistance, gate dielectric reliability, gate leakage reduction, metal gate stack, electron trap generation, gate dielectric stack, equivalent oxide thickness, power law dispersion, gate dielectric applications, alternative gate dielectrics Key Phrases - Capitalized Phrases (CAPs): (learn more)
Technical Digest, Applied Physics Letters, Electron Devices, International Electron Device Meeting, New York, Electron Device Letters, Thin Solid Films, Journal of Applied Physics, International Conference, Gordon Moore, Microelectronic Engineering, Academic Press, Electrochemical Soc, Monte Carlo, Physical Review, Texas Instruments, John Wiley, Santa Clara, Solid State Electronics, Bell Labs, Jack Kilby, Semiconductor Industry Association, United States, Van Houdt, Conference Proceedings New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
High-k dielectrics are a technology landmark so fundamental as to raise important questions about the future economics of the industry. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
silicate alloys, band offset energies, electrostatic integrity, aluminate alloys, silicon body thickness, hole fluence, capacitance equivalent thickness, band offset energy, gate dielectric scaling, advanced gate dielectrics, anode hole injection model, full silicidation, interface electronic states, wave function penetration, oxynitride alloys, boron penetration resistance, gate dielectric reliability, gate leakage reduction, metal gate stack, electron trap generation, gate dielectric stack, equivalent oxide thickness, power law dispersion, gate dielectric applications, alternative gate dielectrics Key Phrases - Capitalized Phrases (CAPs): (learn more)
Technical Digest, Applied Physics Letters, Electron Devices, International Electron Device Meeting, New York, Electron Device Letters, Thin Solid Films, Journal of Applied Physics, International Conference, Gordon Moore, Microelectronic Engineering, Academic Press, Electrochemical Soc, Monte Carlo, Physical Review, Texas Instruments, John Wiley, Santa Clara, Solid State Electronics, Bell Labs, Jack Kilby, Semiconductor Industry Association, United States, Van Houdt, Conference Proceedings New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 51
books:
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- Physics of Semiconductor Devices by Simon M. Sze on page 249, and page 566
- Materials Fundamentals of Molecular Beam Epitaxy by Jeffrey Y. Tsao on page 635, and page 665
- Handbook of Silicon Semiconductor Metrology by Alain C. Diebold on page 517, and page 519
- Semiconductor Devices: Solutions Manual: Physics and Technology by Simon M. Sze on page 249, and page 566
- Digest of Technical Papers by IEEE International Pulsed Power Conference on page 472, and page 563
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