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High k Gate Dielectrics (Series in Material Science and Engineering)
 
 
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High k Gate Dielectrics (Series in Material Science and Engineering) [Hardcover]

Michel Houssa (Editor)
5.0 out of 5 stars  See all reviews (1 customer review)

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Book Description

0750309067 978-0750309066 December 1, 2003 1
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community.

High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.

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Product Details

  • Hardcover: 614 pages
  • Publisher: Taylor & Francis; 1 edition (December 1, 2003)
  • Language: English
  • ISBN-10: 0750309067
  • ISBN-13: 978-0750309066
  • Product Dimensions: 9.4 x 6.8 x 1.5 inches
  • Shipping Weight: 2.6 pounds (View shipping rates and policies)
  • Average Customer Review: 5.0 out of 5 stars  See all reviews (1 customer review)
  • Amazon Best Sellers Rank: #2,704,643 in Books (See Top 100 in Books)

 

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1 of 1 people found the following review helpful:
5.0 out of 5 stars "Timely review of a rapidly evolving research field", December 6, 2004
By 
A. Mathew (Newark, DE USA) - See all my reviews
(REAL NAME)   
This review is from: High k Gate Dielectrics (Series in Material Science and Engineering) (Hardcover)
[...]

Contents

*Introduction
*The need for high-k gate dielectrics and materials requirement
*Deposition techniques - ALCVD, MOCVD, PLD, MBE,
*Characterization
Physico-chemical characterization, X-ray and electron spectroscopies, Oxygen diffusion and thermal stability , Defect characterization by ESR, Band alignment determined by photo-injection , Electrical characteristics Theory
Theory of defects in high-k materials, Bonding constraints and defect formation at Si/high-k interfaces, Band alignment calculations, Electron mobility at the Si/high-k interface, Model for defect generation during electrical stress
*Technological aspects
Device integration issues, Device concepts for sub-100 nm CMOS technologies, Transistor characteristics, Non-volatile memories based on high-k ferroelectric layers

**Synopsis
The drive towards smaller and smaller electronic componentry has huge implications for the materials currently being used. Conventional materials will be unable to function at scales much smaller than those in current use, as quantum mechanical effects will begin to dominate. For this reason new materials with higher electrical permittivity will be required, and this is a subject of intensive research activity within the microelectronics community.

This book reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the first chapter describes the various deposition techniques used for construction of layers at these dimensions. The second chapter considers characterization techniques of the physical, chemical, structural and electronic properties of these materials. The third chapter reviews the theoretical work done in the field, and the final section is devoted to technological applications.

**Published Reviews:
"Michel Houssa's edited volume High-K Gate Dielectrics is a timely review of this rapidly evolving research field. The individual chapters provide a complete, in-depth coverage of current understanding, making the book an excellent source of reference for researchers in High-K gate dielectrics and, in particular, for newcomers to the field. The impressive work and methods presented in these chapters should make the book of interest for a readership beyond those immediately involved in high-k gate dielectric research. I recommend the book as a very good reference sourse and overview to researchers with interest in high-k gate dielectrics.

Susanne Stemmer, Materials Today, Sept '04


Readership
Graduate students and researchers in applied physics and electrical and electronic engineering
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Inside This Book (learn more)
First Sentence:
The success of the semiconductor industry relies on the continuous improvement of integrated circuit performance. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
silicate alloys, gate voltage stress, one unit cell layer, static dielectric tensor, oxide conduction hand, effective charge tensors, target morphology, oxynitride alloys, aluminate alloys, band offset energies, gate dielectric stack, gate oxide deposition, gate injection, tunnelling current flowing, gate stack, remote phonon scattering, flow channel reactors, spectral thresholds, metal bias, ablated species, substrate injection, bandgap width, equivalent oxide thickness, alternative gate dielectrics, energy hand diagram
Key Phrases - Capitalized Phrases (CAPs): (learn more)
New York, Thin Solid Films, Electron Devices, San Francisco, Poole Frenkel, American Institute of Physics, Electron Device Lett, Fowler Nordheim, Monte Carlo, Quantum Mechanics, International Workshop, San Diego, Solid State Electron, Boca Raton, Channel Figure, Electron Der, Hartree Fock, International Sematech, Materials Research Society, Ness York, Solid-State Lett, Surf Sci, Surf Sri, Wang Mahan
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