High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers. The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. The emphasis is on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The authors also introduce the operating principles of other devices, including the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs. The book comes with a complete set of homework problems and a web link to MATLAB programs.
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"...the book is clear and easy to use. The material is presented in an engaging manner and the reader is guided expertly through the territory of heterostructure devices. Apart from its intended use as a book for graduate students, it will be sought after by researchers and engineers, as it presents research material which is disseminated throughout the research literature and has never before been presented together in a book." Current Engineering Practice
Book Description
Semiconductor heterostructures are spearheading the drive toward smaller, faster and lower power devices. Developed out of a graduate course taught at Ohio State University, this is a timely and comprehensive te xt on heterostructures, covering the physics, modeling techniques and the latest devices including MODFETs, HBTs and RTDs. Numerous homework excercises and a web link to MATLAB examples are included. The book will also be of great interest to researchers and engineers, since much of the research material has been gathered together and presented in book form for the first time.
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Inside This Book
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First Sentence:
Modern growth technologies have made possible the growth of new semiconductor devices with unprecedented control on the atomic level. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
sequential scattering events, random superlattices, frequency power series, band structure discontinuities, effective saturation velocity, gate metallization resistance, electrothermal modeling, collector drift region, graded device, interstitial beryllium, subcollector layer, thermionic model, superlattice axis, few lattice parameters, equilibrium band diagram, beryllium diffusion, drain delays, tunneling effective mass, reverse modeling, interband tunneling diodes, semiconductor surface states, collector charging time, total gate width, uniform semiconductor, gate resistance Key Phrases - Capitalized Phrases (CAPs): (learn more)
Physical Review, New York, Solid State Electronics, Applied Physics Letters, Electron Device Letters, Journal of Applied Physics, American Physical Society, John Wiley, Proceedings of the International Conference, Monte Carlo, Cambridge University Press, Physics Review, Academic Press, New Jersey, Prentice Hall, Cornell University, Electronics Letters, Englewood Cliffs, Artech House, Cornell Conference, International Symposium, Principle of the Theory of Solids, The Ohio State University, University of British Columbia, Bell System Technical Journal New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Modern growth technologies have made possible the growth of new semiconductor devices with unprecedented control on the atomic level. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
sequential scattering events, random superlattices, frequency power series, band structure discontinuities, effective saturation velocity, gate metallization resistance, electrothermal modeling, collector drift region, graded device, interstitial beryllium, subcollector layer, thermionic model, superlattice axis, few lattice parameters, equilibrium band diagram, beryllium diffusion, drain delays, tunneling effective mass, reverse modeling, interband tunneling diodes, semiconductor surface states, collector charging time, total gate width, uniform semiconductor, gate resistance Key Phrases - Capitalized Phrases (CAPs): (learn more)
Physical Review, New York, Solid State Electronics, Applied Physics Letters, Electron Device Letters, Journal of Applied Physics, American Physical Society, John Wiley, Proceedings of the International Conference, Monte Carlo, Cambridge University Press, Physics Review, Academic Press, New Jersey, Prentice Hall, Cornell University, Electronics Letters, Englewood Cliffs, Artech House, Cornell Conference, International Symposium, Principle of the Theory of Solids, The Ohio State University, University of British Columbia, Bell System Technical Journal New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 42
books:
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- Physics of Semiconductor Devices by Simon M. Sze on page 487, and page 564
- Solid State Physics: Advances in Research and Applications, Vol. 32 by Henry Ehrenreich on page 140, and page 216
- Solid State Electronic Devices (6th Edition) by Ben Streetman in Front Matter, and page 48
- Semiconductor Devices: Solutions Manual: Physics and Technology by Simon M. Sze on page 487, and page 564
- Quantum Theory of Solids by Charles Kittel on page 175, and page 216
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