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III-Nitride Semiconductors: Optical Properties (Optoelectronic Properties of Semiconductors and Superlattices, V. 14-15)
 
 
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III-Nitride Semiconductors: Optical Properties (Optoelectronic Properties of Semiconductors and Superlattices, V. 14-15) [Hardcover]

Hongxing Jiang (Author)

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Book Description

June 28, 2002 1560329726 978-1560329725 1
The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.
Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides.
This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers.III-Nitride Semiconductors: Optical Properties Part I combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.

Editorial Reviews

Review

This essential book...is the first to present a systematic, comprehensive overview of the optical properties of III-nitride semiconductors...
The style of writing is engagin, which makes the book easily accessible to anyone involved in the development of optoelectronic devices, optical spectroscopy or new materials research.
-Mircea Dragoman, National Research Institute in Microtechnology, Bucharest, Romania..
Book Reviews
–Optics & Photonics News, June 2004

About the Author

Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas.
Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor for the series Optoelectronic Properties of Semiconductors and Superlattices.

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Inside This Book (learn more)
First Sentence:
lll-Nitride based devices have great potential in applications such as UV/blue laser diodes (LDs) and light-emitting diodes (LEDs), solar-blind UV detectors, and high-power/high-temperature electronic devices. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
barrier width dependence, decreasing emission energy, emission energy dependence, nonequilibrium electron distributions, optical excitation density, strong ionicity, emission peak position, excitation photon energy, modal gain spectra, spontaneous emission peak, nonequilibrium excitations, excitation length, emission peak energy, nonradiative recombination lifetimes, population relaxation time, electron correlation function, increasing excitation density, carrier localization, spectral peak positions, excitation photon energies, excitation intensity dependence, fundamental optical properties, homoepitaxial layers, different well widths, reflectance features
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Appl Phys, Phys Lett, Solid State Commun, New York, Nitride Semicond, Status Solidi, Phys Rev, Stokes Raman, Academic Press, Asif Khan, World Scientific, Applied Physics, Physics of Semiconductors, University of Cincinnati, Acta Phys, Nitride Senucond, Raman-Active Phonons, Kansas State University, Phvs Rev, Solid State Physics, The Blue Laser Diode, Lightwave Technol
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