Insulated Gate Bipolar Transistor IGBT Theory and Design (IEEE Press Series on Microelectronic Systems) [Hardcover]

Vinod Kumar Khanna (Author)

Book Description

Publication Date: August 19, 2003 | ISBN-10: 0471238457 | ISBN-13: 978-0471238454 | Edition: 1

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.

• All-in-one resource
• Explains the fundamentals of MOS and bipolar physics.
• Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Editorial Reviews

From the Back Cover

A comprehensive and state-of-the-art resource for the design and fabrication of IGBT

Semiconductor devices, particularly the insulated gate bipolar transistor (IGBT), form the heart of the power electronics industry and play a pivotal role in the regulation and distribution of energy in the world. Since its conception as a switching device, improvements and innovative design ideas have established IGBT as a rugged contender in the competitive electronics field.

Insulated Gate Bipolar Transistors (IGBT): Theory and Design covers basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physics necessary for clearly understanding the subject matter, including chapters on:

• Non-punchthrough, punchthrough, vertical double diffused MOSFET and trench-gate IGBTs; improved lateral and novel IGBT structures; and emerging technologies
• Steady-state and dynamic operation, and soft switching performance; safe operating area and reliability tests of IGBT
• IGBT physics, device and circuit models
• IGBT unit cell design and latching suppression techniques
• IGBT fabrication steps and process design
• IGBT power modules

Unique in focusing on IGBT in its entirety, this book will be an invaluable resource for engineering students and professionals alike.

About the Author

VINOD KUMAR KHANNA, PhD, is a senior scientist working in the solid-state devices division of Central Electronics Engineering Research Institute in Pilani, India. He has been extensively involved for more than twenty years in device, process design and fabrication of power semiconductor devices. He received his PhD in Physics from Kurukshetra University in 1988. A Fellow of the Institution of Electronics and Telecommunication Engineers and a lifetime member of several scientific and professional organizations, Dr. Khanna has published over thirty research papers in international journals and conference proceedings and written two previous books entitled, Handbook of Electrical & Electronics Engineering Fundamentals, and Digital Signal Processing, Telecommunications & Multimedia Technology.

Product Details

• Hardcover: 648 pages
• Publisher: Wiley-IEEE Press; 1 edition (August 19, 2003)
• Language: English
• ISBN-10: 0471238457
• ISBN-13: 978-0471238454
• Product Dimensions: 9.5 x 6.4 x 1.4 inches
• Shipping Weight: 2.2 pounds (View shipping rates and policies)
• Average Customer Review: 4.0 out of 5 stars  See all reviews (1 customer review)
• Amazon Best Sellers Rank: #1,786,909 in Books (See Top 100 in Books)

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Most Helpful Customer Reviews

2 of 3 people found the following review helpful:

4.0 out of 5 stars Enough detail, November 27, 2006

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Roxy Zimmer "Gypsy Obsession" (California) - See all my reviews

This review is from: Insulated Gate Bipolar Transistor IGBT Theory and Design (IEEE Press Series on Microelectronic Systems) (Hardcover)

This book is very easy to read, gets to the point in simple sentences and almost feels like sitting in a class. The first 30 pages provides an overview of IGBTs. Further details are elaborated in subsequent chapters. I highly recommend this book.