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An Introduction to the Physics of Semiconductor Devices (Oxford Series in Electrical and Computer Engineering)
 
 
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An Introduction to the Physics of Semiconductor Devices (Oxford Series in Electrical and Computer Engineering) [Hardcover]

David J. Roulston (Author)


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Book Description

November 19, 1998 0195114779 978-0195114775
An Introduction to the Physics of Semiconductor Devices provides a thorough yet concise introduction to the physical operation of semiconductor devices including diodes, bipolar transistors, MOS field-effect transistors, and junction field-effect transistors, as well as an overview of numerous other devices. Ideal for second- and third-year students in electrical engineering, electronics, and physics, the text is self-contained and includes enough background physics to be accessible to students with no previous exposure to semiconductor devices. The author covers only essential topics, yet provides an in-depth, authoritative treatment of the subject. Taking a novel approach, he keeps the mathematics simple and emphasizes the basic physical operation of each device, making it easier for students to grasp the underlying physical principles. Numerous worked examples facilitate student self-study and helpful appendices contain additional material that advanced students may consult for further background. The text is accompanied by a CD-ROM featuring Student BIPOLE (with MOS Option), a user-friendly software program that allows students to study the important physical characteristics of diodes, BJTs, and MOSFETs, enabling them to step beyond the idealized world and look at real devices.

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About the Author

David J. Roulston is at University of Waterloo.

Product Details

  • Hardcover: 320 pages
  • Publisher: Oxford University Press, USA (November 19, 1998)
  • Language: English
  • ISBN-10: 0195114779
  • ISBN-13: 978-0195114775
  • Product Dimensions: 9.4 x 7.4 x 0.9 inches
  • Shipping Weight: 1.7 pounds
  • Amazon Best Sellers Rank: #2,717,665 in Books (See Top 100 in Books)

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Inside This Book (learn more)
First Sentence:
In this chapter we give the reader a summary overview of basic semiconductor properties and devices. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
impurity atom distribution, noise current squared, injection law, diffusion transit time, injected hole concentration, hole current injected, hole concentration gradient, unity current gain frequency, pno exp, injected carrier concentrations, base doping level, sideways diffusion, moderate doping levels, noise equivalent circuit, low forward bias, background doping level, charge continuity equation, lightly doped side, depletion layer thickness, impurity profile, resistance rbb, maximum oscillation frequency, maximum transconductance, given transistor, oxide isolation
Key Phrases - Capitalized Phrases (CAPs): (learn more)
New York, John Wiley, Bipolar Semiconductor Devices, Englewood Cliffs, New Jersey, Microelectronic Devices, Solid State Electronics, Solid State Electronic Devices, Physics of Semiconductor Devices, Semiconductor Electronics Education Committee
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