The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
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The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
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5.0 out of 5 stars
Excellent Reference!,
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This review is from: Ionizing Radiation Effects in MOS Devices and Circuits (Hardcover)
Great book. (...) If you are starting out in the Rad Effects community this is the book for you. Lots of material and little fluff.
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Inside This Book
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First Sentence:
Silicon MOS (metal-oxide-semiconductor) devices have become the mainstay of the semiconductor industry. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
prompt interface traps, dose enhancement factor, radiation hardness testing, geminate model, hole transport data, interface trap buildup, positive threshold voltage shifts, polysilicon gate devices, degrade hardness, preirradiation value, total dose damage, more interface traps, total dose testing, local photocurrents, dispersive hole transport, hardened technology, ion shunt, other plasma processes, pair creation energy, trapped hole density, postirradiation effects, equilibrium dose, flatband voltage shift, upset thresholds, charge nonuniformities Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Devices, New York, After Winokur, Pergamon Press, Sandia National Laboratories, Monte Carlo, Solid-State Electron, Interface-State Generation, Solid State Circuits, Academic Press, After Sexton, Bell Syst, Generation of Interface States, The Electrochemical Society, Van Gunten, After Boesch, After Schwank, Gamma Rays, New Mexico, After Ning, After Refs, Heavy Charged Particles, Insulating Films, Solid State Technol, Summary References New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Silicon MOS (metal-oxide-semiconductor) devices have become the mainstay of the semiconductor industry. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
prompt interface traps, dose enhancement factor, radiation hardness testing, geminate model, hole transport data, interface trap buildup, positive threshold voltage shifts, polysilicon gate devices, degrade hardness, preirradiation value, total dose damage, more interface traps, total dose testing, local photocurrents, dispersive hole transport, hardened technology, ion shunt, other plasma processes, pair creation energy, trapped hole density, postirradiation effects, equilibrium dose, flatband voltage shift, upset thresholds, charge nonuniformities Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Devices, New York, After Winokur, Pergamon Press, Sandia National Laboratories, Monte Carlo, Solid-State Electron, Interface-State Generation, Solid State Circuits, Academic Press, After Sexton, Bell Syst, Generation of Interface States, The Electrochemical Society, Van Gunten, After Boesch, After Schwank, Gamma Rays, New Mexico, After Ning, After Refs, Heavy Charged Particles, Insulating Films, Solid State Technol, Summary References New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 25
books:
See all 25 books this book cites
3
books
cite this book:
- SiO2 and its Interfaces: Volume 105 (MRS Proceedings) by S. T. Pantelides on 5 pages
- Semiconductor Devices: Solutions Manual: Physics and Technology by Simon M. Sze on 4 pages
- The Effects of Radiation on Electronic Systems by George C. Messenger on page 86, and page 561
- Mechanisms of Radiation Effects in Electronic Materials by V. A. J. Van Lint on page 46, and page 83
- Physics of Semiconductor Devices by Simon M. Sze on page 46, and page 247
See all 25 books this book cites
- Testing of Digital Systems by N. K. Jha on page 24
- Reliability and Failure of Electronic Materials and Devices by Milton Ohring on page 409
- Low Temperature Electronics: Physics, Devices, Circuits, and Applications by Edmundo A. Gutierrez-D on page 489
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