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serendipity". The quantum efficiency of the amphoterically doped GaAs LEDs was five times greater than that of GaAs p-n junctions fabricated by Zn diffusion.
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lambertian emission pattern, natural emission spectrum, ideal isotropic emitter, optical mode density, eye sensitivity function, current spreading region, spontaneous recombination lifetime, carrier overflow, thresholdless laser, junction displacement, light extraction efficiency, optical power emitted, test light source, bimolecular recombination coefficient, resonant cavity light emitting diode, higher spectral purity, lateral emission, confinement layer, epoxy dome, integrated enhancement, red wavelength range, converter materials, lossy region, reference light source, isoelectronic impurities
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New York, Academic Press, San Diego, Inspection of Fig, Cambridge University Press, New Jersey, Plenum Press, Solid State Electronics, Nichia Corporation, Toyoda Gosei Corp, Bell Laboratories, Mitel Corporation, Prentice Hall, Encyclopedia Britannica, Nichia Chemical Industries Corporation, Photonics Technol
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