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Low-Voltage SOI CMOS VLSI Devices and Circuits
 
 
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Low-Voltage SOI CMOS VLSI Devices and Circuits [Hardcover]

James B. Kuo (Author), Shih-Chia Lin (Author)
2.5 out of 5 stars  See all reviews (6 customer reviews)

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Book Description

October 1, 2001 0471417777 978-0471417774 1
A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers
The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques.
Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include:
* SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self-heating, breakdown, ESD, dual-gate devices, accumulation-mode devices, short channel effects, and narrow channel effects
* Low-voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP
* Low-voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma-delta modulators, RF circuits, VCO, mixers, low-noise amplifiers, and high-temperature circuits
With over 300 references to the state of the art and over 300 important figures on low-voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high-tech industries.

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Editorial Reviews

From the Back Cover

A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers

The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques.

Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include:
* SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self-heating, breakdown, ESD, dual-gate devices, accumulation-mode devices, short channel effects, and narrow channel effects
* Low-voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP
* Low-voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma-delta modulators, RF circuits, VCO, mixers, low-noise amplifiers, and high-temperature circuits

With over 300 references to the state of the art and over 300 important figures on low-voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high-tech industries.

About the Author

JAMES B. KUO, PhD, is the NSERC Canada Research Chair Professor of Electrical and Computer Engineering at the University of Waterloo in Ontario, Canada. He is a Fellow of IEEE and an associate editor of IEEE Circuits and Devices Magazine.
SHIH-CHIA LIN, PhD, is a researcher at the University of Waterloo.

Product Details

  • Hardcover: 424 pages
  • Publisher: Wiley-Interscience; 1 edition (October 1, 2001)
  • Language: English
  • ISBN-10: 0471417777
  • ISBN-13: 978-0471417774
  • Product Dimensions: 6.4 x 1 x 9.7 inches
  • Shipping Weight: 1.6 pounds (View shipping rates and policies)
  • Average Customer Review: 2.5 out of 5 stars  See all reviews (6 customer reviews)
  • Amazon Best Sellers Rank: #3,675,570 in Books (See Top 100 in Books)

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Customer Reviews

6 Reviews
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Average Customer Review
2.5 out of 5 stars (6 customer reviews)
 
 
 
 
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0 of 1 people found the following review helpful:
1.0 out of 5 stars Ph.d student from Georgia Tech, January 13, 2003
By A Customer
This review is from: Low-Voltage SOI CMOS VLSI Devices and Circuits (Hardcover)
Two comments:
1. Content is not up-to-date.
2. Too much complicated maths without explaination.
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0 of 1 people found the following review helpful:
1.0 out of 5 stars more suggestion for this book, September 18, 2002
A Kid's Review
This review is from: Low-Voltage SOI CMOS VLSI Devices and Circuits (Hardcover)
I know someone may think he/she got lots of SOI things from this book. As a pioneer in SOI field, I think this book is too mathematical to describe the spirits of SOI devices. Authors should have derivated most important equations, so readers know
what's inside. No one cares about "inside Intel", but "Intel inside"!
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0 of 1 people found the following review helpful:
2.0 out of 5 stars good SOI PD model, May 12, 2002
By A Customer
This review is from: Low-Voltage SOI CMOS VLSI Devices and Circuits (Hardcover)
I like the chapter discussing PD SOI model. It is too concise for
circuit portion, and hopefully the next version will be better!
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Inside This Book (learn more)
First Sentence:
SOI CMOS VLSI technology has become a major technology for integrating VLSI systems. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
front gate oxide, parasitic bipolar device, bipolar leakage, subthreshold drain current characteristics, threshold voltage sensitivity, auxiliary transistor, access pass transistor, film doping density, two drain voltages, front gate voltage, carry chain circuit, back gate bias, body contact approach, larger drain voltage, power spectral density multiplied, using pulse measurement, body contact resistance, kink effects, hole current generated, various drain voltages, buried oxide, floating body structure, gate bias curve, better subthreshold slope, drain current overshoot
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Conf Dig, Dev Let, Floating-Body Effects, Gate Length, Memory Cell Array, Ver Ploeg, Deu Let, High Performance
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