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MOSFET Theory and Design [Paperback]

R. M. Warner Jr. (Author), B. L. Grung (Author)

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Book Description

January 28, 1999 0195116429 978-0195116427
Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter.
Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the complicating factors step by step. It treats the interplay of MOS capacitor and PN junction in the MOSFET both physically and analytically, using some original tools. The book goes on to cover advanced models of the MOSFET, including SPICE treatments of small-signal and large-signal problems using Level 1, 2, and 3 first-generation models, and ending with a brief discussion of second- and third-generation models.
MOSFET Theory and Design offers a "hands on" approach to learning, employing analytic, computer, and design problems. It incorporates additional pedagogical aids such as a book summary, review questions that emphasize essential points, in-text exercises with accompanying solutions, and a comprehensive bibliography.

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Review

"This text could support a first undergraduate course in physical electronics that begins with MOSFETs even before students start electromagnetics. Dielectric constant is demystified with atomic pictorials in an Appendix. Alternatively, students previously introduced to semiconductor physics can appreciate the graduated descent into finer levels of MOSFET modeling and the last chapter, MOSFET-BJT Performance Comparisons."--Arthur Uhlir, Tufts University

About the Author

R. M. Warner is at University of Minnesota.

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Inside This Book (learn more)
First Sentence:
A thin and tightly adherent layer of glass, mainly SiO2, can be formed on the surface of a single-crystal silicon sample by heating it in an oxidizing atmosphere. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
curved regime, one normalized unit, symmetric step junction, aluminum field plate, comprehending parasitic elements, subthreshold transconductance, saturated load, areal charge density, silicon portion, flatband condition, surplus carriers, interface trapped charge, parasitic charge, interfacial states, depletion approximation, fast surface states, asymmetric junction, subthreshold regime, net doping, threshold plane, flatband voltage, subthreshold conditions, doping ratio, normalized electric field, metallurgical junction
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Pergamon Press Ltd, After Grove, Substituting Equation
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