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GaN and Related Materials (Optoelectronic Properties of Semiconductors and Superlattices)
  
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GaN and Related Materials (Optoelectronic Properties of Semiconductors and Superlattices) [Paperback]

Stephen J. Pearton (Editor)
4.0 out of 5 stars  See all reviews (1 customer review)

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Book Description

9056995170 978-9056995171 October 31, 1997 1
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices.
This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

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Product Details

  • Paperback: 456 pages
  • Publisher: CRC Press; 1 edition (October 31, 1997)
  • Language: English
  • ISBN-10: 9056995170
  • ISBN-13: 978-9056995171
  • Product Dimensions: 8.7 x 6 x 1.2 inches
  • Shipping Weight: 1.7 pounds (View shipping rates and policies)
  • Average Customer Review: 4.0 out of 5 stars  See all reviews (1 customer review)
  • Amazon Best Sellers Rank: #4,674,682 in Books (See Top 100 in Books)

 

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0 of 4 people found the following review helpful:
4.0 out of 5 stars great book, September 9, 2000
This review is from: GaN and Related Materials (Optoelectronic Properties of Semiconductors and Superlattices) (Paperback)
In the blue light device the technology of manufacture GaN is very important. We can learn a lot in this book that the authors write many of property of GaN.
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Inside This Book (learn more)
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First Sentence:
Gallium nitride, GaN, was synthesized more than 50 years ago by Juza and Hahn [1] who passed ammonia over hot gallium. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
near bandgap region, indium mole fraction, implant isolation, measurable redistribution, ternary films, surface nitridation, specific contact resistivity, calculated formation energies, indium droplets, nitrogen vacancy, alloy broadening, aluminum mole fraction, native defects, etch mechanism, ion implantation doping, optical characterisation, applied microwave power, nitrogen vacancies, etch rates, etch products, cubic substrates, external quantum efficiency, anisotropic profiles, low resistance ohmic contacts, wide bandgap materials
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Van de Walle, New York, Asif Khan, Van Hove, Topical Workshop, John Wiley, North Holland Publishing Company, Sandia National Laboratories, Solid State Commun, Solid State Electronics, Status Solidi, Drain Voltage, Hagerott Crawford, Materials Science Forum, Monte Carlo, New Mexico, Sapphire Fig
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