Presents a comprehensive treatment of materials aspects of GaAs, InP and related alloys used in the fabricating of photonic and electronic devices. It includes discussions on point defects and dislocations in III-V compounds. Coverage focuses on state-of-the-art materials growth and characterization; physics and chemistry of point defects; and dislocations and the connection between defects and device reliability.
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This book deals with the material aspects of two of the important III-V compound semiconductors at the present time. It gives a comprehensive treatment of materials preparation, characterization, and properties. For courses in microelectronic materials in EE departments.
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