This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.
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2.0 out of 5 stars
Formulistic,
By Brews (Tucson, AZ) - See all my reviews
This review is from: Mosfet Modeling for Circuit Analysis And Design (International Series on Advances in Solid State Electronics) (International Series on Advances in Solid State Electronics and Technology) (Hardcover)
This book is an extended treatment of the authors' published work. As such it is largely algebraic in nature, with limited connection to technology or sophisticated numerical simulations. Treatment of multidimensional effects like barrier lowering is rudimentary, and gives an optimistic appraisal of simple models. Treatment of non quasi static behavior is cursory.
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capacitive coefficients, equivalent capacitive circuit, transistor compact modeling, virtual charge density, inversion charge density, unified charge control model, impedance field method, total inversion charge, induced gate noise, drain current noise, intrinsic cutoff frequency, surface potential models, depletion charge density, capacitive model, transistor model valid, inversion charge densities, strong inversion saturation, channel charge density, explicit physical model, weak inversion, body effect factor, inversion capacitance, inversion level, silicon film thickness, semiconductor capacitance Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Devices, Solid-State Circuits, Carlos Galup-Montoro, Solid-State Electron, Márcio Cherem Schneider, New York, Ana Isabela Araújo Cunha, Electron Device Lett, Chih-Tang Sah, Yannis Tsividis, Yuan Taur, John Wiley, Rafael Rios, François Krummenacher, Gennady Gildenblat, Mitiko Miura-Mattausch, Narain Arora, Analog Integr, Kwyro Lee, Michael Shur, Philips Models, Ana Isabela Aradjo Cunha, Cambridge University Press, Matthias Bucher, Prentice Hall New!
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capacitive coefficients, equivalent capacitive circuit, transistor compact modeling, virtual charge density, inversion charge density, unified charge control model, impedance field method, total inversion charge, induced gate noise, drain current noise, intrinsic cutoff frequency, surface potential models, depletion charge density, capacitive model, transistor model valid, inversion charge densities, strong inversion saturation, channel charge density, explicit physical model, weak inversion, body effect factor, inversion capacitance, inversion level, silicon film thickness, semiconductor capacitance Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Devices, Solid-State Circuits, Carlos Galup-Montoro, Solid-State Electron, Márcio Cherem Schneider, New York, Ana Isabela Araújo Cunha, Electron Device Lett, Chih-Tang Sah, Yannis Tsividis, Yuan Taur, John Wiley, Rafael Rios, François Krummenacher, Gennady Gildenblat, Mitiko Miura-Mattausch, Narain Arora, Analog Integr, Kwyro Lee, Michael Shur, Philips Models, Ana Isabela Aradjo Cunha, Cambridge University Press, Matthias Bucher, Prentice Hall New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Surprise Me!
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