- Comprehensive and up-to-date coverage of currently used transistors for commercial and military applications.
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Book Description
Editorial Reviews
From the Back Cover
A timely and thorough overview of the state of the art of microwave transistors
Since the invention of the bipolar transistor in 1947, semiconductor electronics has been advancing and evolving at an enormous pace. Most of the attention has been focused on Si VLSI (Very Large Scale Integration) technology, the backbone of the consumer semiconductor electronics industry. Microwave transistors went almost unnoticed until the early 1980s because they were primarily utilized in military and space applications. The recent far-reaching upheavals in civil communications technology-especially wireless communication such as cell phones-have thrust microwave transistor technology into the limelight as never before.
Modern Microwave Transistors: Theory, Design, and Performance prepares the engineer with a wide-ranging introduction and overview of microwave transistors. Written by two acknowledged experts, this guide to one of the fastest growing fields in semiconductor electronics offers insight into:
* History and concepts of microwave transistors
* Semiconductor and heterostructure physics
* Properties of the semiconductor materials used in microwave transistors, such as Si, SiGe, III-V compounds, and III-nitrides
* Device structures, analysis, and design of the different types of microwave transistors including MESFETs, HEMTs, MOSFETs, BJTs, and HBTs
* State-of-the-art performance of microwave transistors
* Current and emerging applications of microwave transistors
A timely and comprehensive contribution to the field, Modern Microwave Transistors is an unmatched resource for RF, device, circuit and wireless communications engineers, and others with an interest in transistor technology. It will also be useful for students in the field of semiconductor and microwave electronics.
Since the invention of the bipolar transistor in 1947, semiconductor electronics has been advancing and evolving at an enormous pace. Most of the attention has been focused on Si VLSI (Very Large Scale Integration) technology, the backbone of the consumer semiconductor electronics industry. Microwave transistors went almost unnoticed until the early 1980s because they were primarily utilized in military and space applications. The recent far-reaching upheavals in civil communications technology-especially wireless communication such as cell phones-have thrust microwave transistor technology into the limelight as never before.
Modern Microwave Transistors: Theory, Design, and Performance prepares the engineer with a wide-ranging introduction and overview of microwave transistors. Written by two acknowledged experts, this guide to one of the fastest growing fields in semiconductor electronics offers insight into:
* History and concepts of microwave transistors
* Semiconductor and heterostructure physics
* Properties of the semiconductor materials used in microwave transistors, such as Si, SiGe, III-V compounds, and III-nitrides
* Device structures, analysis, and design of the different types of microwave transistors including MESFETs, HEMTs, MOSFETs, BJTs, and HBTs
* State-of-the-art performance of microwave transistors
* Current and emerging applications of microwave transistors
A timely and comprehensive contribution to the field, Modern Microwave Transistors is an unmatched resource for RF, device, circuit and wireless communications engineers, and others with an interest in transistor technology. It will also be useful for students in the field of semiconductor and microwave electronics.
About the Author
FRANK SCHWIERZ, PhD, is head of the RF & Nanoelectronics Research Group at Technische Universit?t (TU) Ilmenau, Germany.
JUIN J. LIOU, PhD, is a professor in the School of Electrical and Computer Science at the University of Central Florida.
JUIN J. LIOU, PhD, is a professor in the School of Electrical and Computer Science at the University of Central Florida.
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1 of 1 people found the following review helpful:
5.0 out of 5 stars
A comprehensive book,
This review is from: Modern Microwave Transistors: Theory, Design, and Performance (Hardcover)
that completely met all of my expectations. Great for graduate students and professional engineers alike. This work covers HEMT and HBT theory, design, and trades with stunning accuracy, alleviating the pain associated with modifying MESFET equations to these technologies.
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Inside This Book
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First Sentence:
Since the invention of the bipolar transistor in 1947, semiconductor electronics has been advancing and evolving at an enormous pace. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
nonstationary carrier transport, reported cutoff frequency, quasineutral base, gate finger width, reported cutoff frequencies, crowave transistors, quasineutral emitter, reported maximum frequency, setback layer, spike heterojunction, typical layer sequence, collector doping density, multifinger structure, emitter doping density, doped barrier layer, conduction band spike, fringing regions, base doping density, emitter ballast resistor, experimental transistors, base pushout, minimum noise figure, parasitic source resistance, output power density, heterostructure physics Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Device Lett, New York, Solid-State Electron, High Performance, Monte Carlo, Artech House, Emitter Base Collector, Source Gate Drain, Datareview Series, Microwave Theory Tech, Solid-State Circuits, Academic Press, Silicon Carbide, World Scientific, Bell Labs, Electron Der, Year Figure, Current Trends, Datarevicw Series, Inserting Eqs, Solid-Stale Electron, Super Low-Noise, Utz Verlag, W-Band Low-Noise, Year Ref New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Since the invention of the bipolar transistor in 1947, semiconductor electronics has been advancing and evolving at an enormous pace. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
nonstationary carrier transport, reported cutoff frequency, quasineutral base, gate finger width, reported cutoff frequencies, crowave transistors, quasineutral emitter, reported maximum frequency, setback layer, spike heterojunction, typical layer sequence, collector doping density, multifinger structure, emitter doping density, doped barrier layer, conduction band spike, fringing regions, base doping density, emitter ballast resistor, experimental transistors, base pushout, minimum noise figure, parasitic source resistance, output power density, heterostructure physics Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Device Lett, New York, Solid-State Electron, High Performance, Monte Carlo, Artech House, Emitter Base Collector, Source Gate Drain, Datareview Series, Microwave Theory Tech, Solid-State Circuits, Academic Press, Silicon Carbide, World Scientific, Bell Labs, Electron Der, Year Figure, Current Trends, Datarevicw Series, Inserting Eqs, Solid-Stale Electron, Super Low-Noise, Utz Verlag, W-Band Low-Noise, Year Ref New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 31
books:
See all 31 books this book cites
- Physics of Semiconductor Devices by Simon M. Sze on page 117, page 328, and page 396
- Semiconductor Devices: Solutions Manual: Physics and Technology by Simon M. Sze on page 117, page 328, and page 396
- Current Trends in Heterojunction Bipolar Transistors (Selected Topics in Electronics and Systems) by M. F. Chang on page 463, and page 464
- Physics and Technology of Semiconductor Devices (A Wiley International Edition) by A. S. Grove on page 328, and page 396
- Compound Semiconductor Device Physics by Author Unknown on page 51, and page 118
See all 31 books this book cites
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