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Modern Semiconductor Device Physics [Hardcover]

Simon M. Sze (Editor)
4.0 out of 5 stars  See all reviews (1 customer review)

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Book Description

October 24, 1997 0471152374 978-0471152378 1
An in-depth, up-to-date presentation of the physics and operational principles of all modern semiconductor devices

The companion volume to Dr. Sze's classic Physics of Semiconductor Devices, Modern Semiconductor Device Physics covers all the significant advances in the field over the past decade. To provide the most authoritative, state-of-the-art information on this rapidly developing technology, Dr. Sze has gathered the contributions of world-renowned experts in each area. Principal topics include bipolar transistors, compound-semiconductor field-effect-transistors, MOSFET and related devices, power devices, quantum-effect and hot-electron devices, active microwave diodes, high-speed photonic devices, and solar cells.

Supported by hundreds of illustrations and references and a problem set at the end of each chapter, Modern Semiconductor Device Physics is the essential text/reference for electrical engineers, physicists, material scientists, and graduate students actively working in microelectronics and related fields.

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Modern Semiconductor Device Physics + Physics of Semiconductor Devices + Advanced Semiconductor Fundamentals (2nd Edition)
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Editorial Reviews

From the Publisher

Complementing Dr. Sze's classic Physics of Semiconductor Devices, this book gathers the foremost authorities in the semiconductor field. It offers detailed coverage of the enhanced performances of classical devices and the physical concepts of novel devices conceived since 1981.

From the Back Cover

An in-depth, up-to-date presentation of the physics and operational principles of all modern semiconductor devices

The companion volume to Dr. Sze's classic Physics of Semiconductor Devices, Modern Semiconductor Device Physics covers all the significant advances in the field over the past decade. To provide the most authoritative, state-of-the-art information on this rapidly developing technology, Dr. Sze has gathered the contributions of world-renowned experts in each area. Principal topics include bipolar transistors, compound-semiconductor field-effect-transistors, MOSFET and related devices, power devices, quantum-effect and hot-electron devices, active microwave diodes, high-speed photonic devices, and solar cells.

Supported by hundreds of illustrations and references and a problem set at the end of each chapter, Modern Semiconductor Device Physics is the essential text/reference for electrical engineers, physicists, material scientists, and graduate students actively working in microelectronics and related fields.

Product Details

  • Hardcover: 556 pages
  • Publisher: Wiley-Interscience; 1 edition (October 24, 1997)
  • Language: English
  • ISBN-10: 0471152374
  • ISBN-13: 978-0471152378
  • Product Dimensions: 9.6 x 6.4 x 1.3 inches
  • Shipping Weight: 2.1 pounds (View shipping rates and policies)
  • Average Customer Review: 4.0 out of 5 stars  See all reviews (1 customer review)
  • Amazon Best Sellers Rank: #1,526,218 in Books (See Top 100 in Books)

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4 of 13 people found the following review helpful:
4.0 out of 5 stars One of the BEST BOOKS, March 23, 2001
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This review is from: Modern Semiconductor Device Physics (Hardcover)
This books is realy one of the best books that I had read, before I find it hard to figure out if how a device works. Now, because of this book, I understand how semiconductors do work and their properties.
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Inside This Book (learn more)
First Sentence:
Bipolar transistors were the earliest solid-state devices with useful amplifying properties, and traditionally have been preeminent in high-speed circuits, in analog circuits, and in power devices. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
desired breakdown voltage, maximum controllable current density, charge injection transistor, emitter states, parasitic thyristor, junction grid, drift region, collector barrier, resonant tunneling transistor, negative transconductance, hole current flow, thyristor structure, reverse blocking capability, tandem cells, base transit time, power semiconductor devices, edge termination, schematic band diagram, rear contact, scaled devices, mesa region, device transconductance, charge control model, gate bias, sequential tunneling
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Dev, New York, Gate Drain, Academic Press, Monte Carlo, Electron Der, Air Mass, World Conference, Photovoltaic Energy Conversion, Solid-State Electron, John Wiley, Photovoltaic Specialists Conference, Solid State Electron, Technical Digest, World Scientific, After Bude, After Shur, Lightwave Technol, Microwave Theory Techn, After Mastrapasqua, After Yano, After Aoki, After Lunardi, After Peatman, After Zah
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