Nanoscale Transistors: Device Physics, Modeling and Simulation [Hardcover]

Mark Lundstrom (Author), Jing Guo (Author)

Book Description

Publication Date: December 9, 2005 | ISBN-10: 0387280022 | ISBN-13: 978-0387280028 | Edition: 1

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Editorial Reviews

From the Back Cover

NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules. The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices.

About the Author

Mark S. Lundstrom is the Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University where he also directs the NSF Network for Computational Nanotechnology. His current research interests center on the physics of semiconductor devices, especially nanoscale transistors. His previous work includes studies of heterostructure devices, solar cells, heterojunction bipolar transistors and semiconductor lasers. During the course of his Purdue career, Lundstrom has served as director of the Optoelectronics Research Center and assistant dean of the Schools of Engineering. He is a fellow of both the Institute of Electrical and Electronic Engineers (IEEE) and the American Physical Society and the recipient of several awards for teaching and research — most recently the 2002 IEEE Cledo Brunetti Award and the 2002 Semiconductor Research Corporation Technical Achievement Award for his work with his colleague, S. Datta, on nanoscale electronics. Jing Guo is an assistant professor of Electrical and Computer Engineering at University of Florida, Gainesville. His has worked on the theory, modeling and simulation of a variety of nanotransistors, including silicon nanotransistors, carbon nanotube transistors, and single electron transistors, in close collaboration with experimentalists. His current research interests focus on modeling and simulation of nanoscale devices, carbon nanotube electronics and optoelectronics, quantum transport, physics of nanoscale transistors, and parallel computation.

Product Details

• Hardcover: 232 pages
• Publisher: Springer; 1 edition (December 9, 2005)
• Language: English
• ISBN-10: 0387280022
• ISBN-13: 978-0387280028
• Product Dimensions: 9.3 x 6.2 x 0.7 inches
• Shipping Weight: 1.1 pounds (View shipping rates and policies)
• Average Customer Review: 3.5 out of 5 stars  See all reviews (2 customer reviews)
• Amazon Best Sellers Rank: #2,142,604 in Books (See Top 100 in Books)

More About the Author

Discover books, learn about writers, read author blogs, and more.

Customer Reviews

Most Helpful Customer Reviews

9 of 9 people found the following review helpful:

2.0 out of 5 stars Limited Audience, July 3, 2007

By 

Brews (Tucson, AZ) - See all my reviews

This review is from: Nanoscale Transistors: Device Physics, Modeling and Simulation (Hardcover)

This book gets two stars because I estimate 2 out of 5 readers attracted to this title will find what they want. The authors deliberately limit the target audience to those that have mastered S. Datta's two books: "Electronic Conduction in Mesoscopic Systems" and "Quantum Transport: Atom to Transistor". In addition, the readers should have assembled a small library of journal articles for "details", particularly those up to 2003 with author Lundstrom as participating author. However, the authors do relent briefly in Chapter 2, which is an undergraduate lecture on MOSFETs and bipolar devices.
The audience is further limited to those that expect band theory to apply to these devices, and an effective mass approximation to band theory at that. Devices tend to be "thermal reservoirs" connected by geometrically ideal bars that confine the electrons. A third "gate" electrode shifts the density of states up or down with the gate voltage. An idealized transmission coefficient treats scattering.
If you are in the target audience you'll be happy with this book. If you want a book that presents theoretical and numerical detail, doesn't require an ancillary library of journal papers, and deals with real boundary dependencies, this book is not it.

5.0 out of 5 stars Video lectures for this book, December 19, 2010

By 

nk - See all my reviews

This review is from: Nanoscale Transistors: Device Physics, Modeling and Simulation (Paperback)

I have not read this book but wish to say that Mark Lundstrom (of Purdue University) teaches a course titled 'Nanoscale Transistors' and lecture videos for this course are available for free at nanohub.org. Check it out, it's a great course.