Customer Reviews

Nanoscale Transistors: Device Physics, Modeling and Simulation

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This book gets two stars because I estimate 2 out of 5 readers attracted to this title will find what they want. The authors deliberately limit the target audience to those that have mastered S. Datta's two books: "Electronic Conduction in Mesoscopic Systems" and "Quantum Transport: Atom to Transistor". In addition, the readers should have assembled a small library of journal articles for "details", particularly those up to 2003 with author Lundstrom as participating author. However, the authors do relent briefly in Chapter 2, which is an undergraduate lecture on MOSFETs and bipolar devices.
The audience is further limited to those that expect band theory to apply to these devices, and an effective mass approximation to band theory at that. Devices tend to be "thermal reservoirs" connected by geometrically ideal bars that confine the electrons. A third "gate" electrode shifts the density of states up or down with the gate voltage. An idealized transmission coefficient treats scattering.
If you are in the target audience you'll be happy with this book. If you want a book that presents theoretical and numerical detail, doesn't require an ancillary library of journal papers, and deals with real boundary dependencies, this book is not it.

I have not read this book but wish to say that Mark Lundstrom (of Purdue University) teaches a course titled 'Nanoscale Transistors' and lecture videos for this course are available for free at nanohub.org. Check it out, it's a great course.