Operation end Modeling of the MOS Transistor, 2/e carefully leads from physical principles to relevant working models of the MOS Transistors device. Models range from the very simple to sophisticated with the connections between models of successive levels clearly identified. Intuitive understanding is provided through extensive discussions.
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Book Description
Editorial Reviews
About the Author
Yannis Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University. His work with MOS transistors began in 1975 as part of his Ph.D. work at the University of California, Berkeley, in the context of the design and fabrication of the first fully-integrated MOS operational amplifier. He is a Fellow of IEEE. Among his awards are the 1984 IEEE W. R. G. Baker Prize for the best IEEE publication and the 2003 IEEE International Solid-State Circuits Conference Outstanding Paper Award.
Colin McAndrew became involved with modeling semiconductor devices in 1987 and has contributed to the development of models for MOS, bipolar, and passive devices. He developed the backward-propagation-of-variation (BPV) technique for statistical modeling and has been a primary advocate of the use of Verilog-A and compilers for device modeling. He has a Ph.D. from the University of Waterloo, works at Freescale Semiconductor, and is a Fellow of the IEEE.
--This text refers to an alternate Hardcover edition.
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Most Helpful Customer Reviews
7 of 7 people found the following review helpful:
5.0 out of 5 stars
Excellent addition to your library,
By Kurt Rasmussen (Torrance, CA United States) - See all my reviews
This review is from: Operation & Modeling of the MOS Transistor (Hardcover)
I don't usually write reviews unless the book is either very poor or very good. This is one of the best books on my shelf. If you want to know the MOS transistor this is the book. Well researched, excellent explanations, excellent appendices. Other authors of technical books should use this as an example of how to write a good technical book.
7 of 8 people found the following review helpful:
5.0 out of 5 stars
Excellent! Remarkable.,
By A Customer
This review is from: Operation & Modeling of the MOS Transistor (Hardcover)
Just reading the Preface to this book, I fell in love with the author. I completely agree that sometimes the most rigorous and careful treatment of a subject actually makes it possible to study the material faster!! What always frustrated me and slowed me down in reading other books was the sloppiness and hand waving. It's amazing that many Ph.Ds and even authors of famous books like Uyemura's "Fundamentals of MOS ICs" don't understand the simple body effect, and talk about complete nonsense showing a 2 terminal capacitor with Vb applied to the bulk, and saying that the Vt will now change by the sqrt(Vb) body effect. They don't understand that the body effect is a 3 terminal effect and in 2 terminals if you apply Vb to bulk then your Vt will have to increase by Vb--NOT sqrt(Vb)!!! This book is a delight. Just the material on contact potentials was worth the money.If you are serious about really understanding MOSFETs, if you hate non-sense and hand waving, then this book is for you.
4 of 4 people found the following review helpful:
5.0 out of 5 stars
Just a masterpiece........,
By Jack Port "HIMM" (San diego,CA) - See all my reviews
This review is from: Operation & Modeling of the MOS Transistor (Hardcover)
I am a graduate student with main area of interest in Mixed mode design,testing and device modelling.This book was suggested to me by my proffessor.It is the book for MOSFET.I have read many books on this topic like Tyagi,Foty,massobrio etc but this books stands apart.It is a very well written book.Its progress is very logical going from two terminal device to four terminal device with very good explanation of the physics.More importantly the emphasis on the approximations made makes things clearer.....For a person working with Mosfets it is a must......
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Inside This Book
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First Sentence:
The discussion of MOS devices in this book will be based on an understanding of a few basic concepts. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
charge sheet model, effective reverse bias, unimplanted device, fluid dynamical analog, transition from nonsaturation, inversion layer charge, strong inversion model, extrapolated threshold voltage, nonsaturation region, moderate inversion, layer charge magnitude, weak inversion, drain current expression, effective threshold voltage, bulk punchthrough, total mobile charge, induced gate noise, pinchoff region, depletion region charge, ionized acceptor atoms, explicit physical model, equivalent input noise voltage, depletion region depth, depletion region edge, complete transistor Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Devices, Solid-State Electronics, New York, Electron Device Letters, Journal of Solid-State Circuits, Technical Digest, Electronics Letters, Van de Wiele, John Wiley, Englewood Cliffs, The Netherlands, International Conference, San Francisco, Technical Report, Journal of Applied Physics, Academic Press, Digest of Technical Papers, International Solid-State Circuits Conference, International Symposium, Stanford University, Electronics Research Laboratory, Microelectronic Test Structures, Philips Research Reports, Physics of Semiconductor Devices, University of California New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
The discussion of MOS devices in this book will be based on an understanding of a few basic concepts. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
charge sheet model, effective reverse bias, unimplanted device, fluid dynamical analog, transition from nonsaturation, inversion layer charge, strong inversion model, extrapolated threshold voltage, nonsaturation region, moderate inversion, layer charge magnitude, weak inversion, drain current expression, effective threshold voltage, bulk punchthrough, total mobile charge, induced gate noise, pinchoff region, depletion region charge, ionized acceptor atoms, explicit physical model, equivalent input noise voltage, depletion region depth, depletion region edge, complete transistor Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Devices, Solid-State Electronics, New York, Electron Device Letters, Journal of Solid-State Circuits, Technical Digest, Electronics Letters, Van de Wiele, John Wiley, Englewood Cliffs, The Netherlands, International Conference, San Francisco, Technical Report, Journal of Applied Physics, Academic Press, Digest of Technical Papers, International Solid-State Circuits Conference, International Symposium, Stanford University, Electronics Research Laboratory, Microelectronic Test Structures, Philips Research Reports, Physics of Semiconductor Devices, University of California New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 31
books:
See all 31 books this book cites
4
books
cite this book:
- Semiconductor Devices: Solutions Manual: Physics and Technology by Simon M. Sze on 12 pages
- Physics of Semiconductor Devices by Simon M. Sze on 12 pages
- Compact Transistor Modelling for Circuit Design (Computational Microelectronics) by H. C. De Graaff on 7 pages
- Digest of Technical Papers by IEEE International Pulsed Power Conference on 6 pages
- Applied Solid State Sciences. Advances in Materials and Device Research, Supplement 2: Silicon Integrated Circuits. Part B by Dawon Kahng on 6 pages
See all 31 books this book cites
- Trade-Offs in Analog Circuit Design: The Designer's Companion by Chris Toumazou on page 312, and page 589
- Handshake Circuits: An Asynchronous Architecture for VLSI Programming (Cambridge International Series on Parallel Computation) by Kees van Berkel in Back Matter
- Device Modeling for Analog and RF CMOS Circuit Design by Trond Ytterdal on page 117
- CMOS Circuit Design, Layout, and Simulation by R. Jacob Baker on page 103
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