Customer Reviews

Operation & Modeling of the MOS Transistor

5 star:		(9)
4 star:		(1)
3 star:		(0)
2 star:		(0)
1 star:		(0)

 

 

I don't usually write reviews unless the book is either very poor or very good. This is one of the best books on my shelf. If you want to know the MOS transistor this is the book. Well researched, excellent explanations, excellent appendices. Other authors of technical books should use this as an example of how to write a good technical book.

Just reading the Preface to this book, I fell in love with the author. I completely agree that sometimes the most rigorous and careful treatment of a subject actually makes it possible to study the material faster!! What always frustrated me and slowed me down in reading other books was the sloppiness and hand waving. It's amazing that many Ph.Ds and even authors of famous books like Uyemura's "Fundamentals of MOS ICs" don't understand the simple body effect, and talk about complete nonsense showing a 2 terminal capacitor with Vb applied to the bulk, and saying that the Vt will now change by the sqrt(Vb) body effect. They don't understand that the body effect is a 3 terminal effect and in 2 terminals if you apply Vb to bulk then your Vt will have to increase by Vb--NOT sqrt(Vb)!!! This book is a delight. Just the material on contact potentials was worth the money.

If you are serious about really understanding MOSFETs, if you hate non-sense and hand waving, then this book is for you.

I am a graduate student with main area of interest in Mixed mode design,testing and device modelling.This book was suggested to me by my proffessor.It is the book for MOSFET.I have read many books on this topic like Tyagi,Foty,massobrio etc but this books stands apart.It is a very well written book.Its progress is very logical going from two terminal device to four terminal device with very good explanation of the physics.More importantly the emphasis on the approximations made makes things clearer.....

For a person working with Mosfets it is a must......

This review is for the third-edition (ISBN 978-0-19-517015-3) of this book. All other reviews by others prior to this review are for the second-edition (ISBN 0-19-517014-8). However, all other reviews are still applicable to the third-edition.

As other reviewers already pointed out, this is a great electrical/electronics engineering textbook. The third-edition has been extensively revised and 700-page long while the second-edition is 600-page long. I have absolutely no doubt in my mind that people who enjoyed the second-edition will also enjoy the third-edition even more and will feel that the contents of the book are up-to-date.

The mathematical requirements to understand this book are introductory differential and integral calculus. And one must be willing to sit down with a pencil and paper to derive many equations in the book. Furthermore, one must have ready access to computer with mathematical software such as MATLAB with Optimization Toolbox installed. I found myself using MATLAB commands such as "fsolve" a lot to plot the graphs that I see on the book.

This book covers only Si (silicon) bulk MOS transistors and does not cover the following MOS topics.

SOI transistors
GaAs/InP transistors
RF modeling

In my opinion, the authors intended to write a textbook, not an encyclopedia. And it becomes very clear why some topics are left out of the book as one reads through the book. The books/papers covering missing topics are listed in Bibliography section at the end of each chapter. The authors never use a term such as "It is easy to see..." and skip explanations of certain topics in the book. If a topic needs to be explained, the authors went great lengths to explain the topic. The authors are also strict about using symbols, especially Greek symbols. A symbol has the same meaning throughout the entire book. This consistent symbol usage itself is not an easy feat to achieve because I have seen in many other books that one symbol means one thing in one chapter but means completely something else in another chapter.

Finally, the authors indicate in the book that additional material and errata will be posted on the following Web site.

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This book is the best one for MOSFET, very clear, very detailed,recommend every one working on seminconductor read it;
It will make you become a expert of MOSFET.
Thanks Professor Tsividis and McAndrew. Great book!

This is probably the best textbook I have used in my entire academic career (MS student in Electrical Engineering). If you want to know about the MOS transistor, read this book. The author assumes knowledge approximate to that of an undergraduate class in semiconductor devices.

From a great chapter on the MOS capacitor, to HF modeling, to small dimension effects, I keep returning to this book to refresh my memory on just about every aspect of MOSFET operation. Not only does it have all of the math and physics you want, but the actual writing is pretty insightful, too.

This book is to MOSFETS what Grey & Meyer are to analog IC design.

I used this book several years ago for an advanced field effect device course in graduate school. In the beginning of graduate school I was lost when it came to understanding semiconductor devices as I had previously done my undergraduate work in chemical engineering. After hitching a ride on the Sze and Tsividis train, I was ready to go. This book is well written, concise and does not leave out detail. A truly remarkable text. It turned a frustrating subject into one I enjoy and appreciate. My only warning is; I hope you are good at math :)

A new updated edition would be nice. While the industry is still battling short channel effects, the techniques covered in the text are a bit out of date.

I bought this book since 1st edition more than 10 years ago for collection.
But for the 2nd edition I bought 7 years ago, I use it as a reference for basic understanding. This is a very detailed textbook about MOSFET. But I still don't know how much different between small-signal model and large-signal model as a lumped circuit elements. Please gives an example of measurement value for recent development of small and large signal model lumped element of MOSFET so that I can design something realistic without HSPICE or SmartSPICE.Some reviewer from NEWCAS-TAISA2008 told me that basic noise model is useless. Does anyone beleive it true or false? So, I will wait for the 3rd edition of this book.

Just reading the Preface to this book, I fell in love with the author. I completely agree that sometimes the most rigorous and careful treatment of a subject actually makes it possible to study the material faster!! What always frustrated me and slowed me down in reading other books was the sloppiness and hand waving. It's amazing that many Ph.Ds and even authors of famous books like Uyemura's "Fundamentals of MOS ICs" don't understand the simple body effect, and talk about complete nonsense showing a 2 terminal capacitor with Vb applied to the bulk, and saying that the Vt will now change by the sqrt(Vb) body effect. They don't understand that the body effect is a 3 terminal effect and in 2 terminals if you apply Vb to bulk then your Vt will have to increase by Vb--NOT sqrt(Vb)!!! This book is a delight. Just the material on contact potentials was worth the money.

This is a repeat of a review I did previously.

Very good book, very neat and clean description, easy to understand, very informative and technical yet easy to understand.