Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) [Hardcover]

David Redfield (Author), Richard H. Bube (Author)

Book Description

ISBN-10: 0521461960 | ISBN-13: 978-0521461962 | Publication Date: January 26, 1996

This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

Editorial Reviews

Review

"This book by Redfield and Bube gives a comprehensive review of the subject. In my opinion, the authors review the most important PI defects in crystalline and amorphous semiconductors, focusing on existing models without mathematical complications and emphasizing the need for more sophisticated many-electron models....invaluable as an introduction for those who are new to the field and for graduate students." J. Abdulhalim, Optics & Photonics News

Book Description

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices.The properties of DX and EL2 centers in IIISHV compounds are presented and a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The effects of such defects in a number of devices are discussed.

Product Details

• Hardcover: 240 pages
• Publisher: Cambridge University Press (January 26, 1996)
• Language: English
• ISBN-10: 0521461960
• ISBN-13: 978-0521461962
• Product Dimensions: 9.3 x 6.2 x 0.8 inches
• Shipping Weight: 1.1 pounds (View shipping rates and policies)
• Average Customer Review: 3.0 out of 5 stars  See all reviews (1 customer review)
• Amazon Best Sellers Rank: #833,759 in Books (See Top 100 in Books)

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Most Helpful Customer Reviews

2 of 2 people found the following review helpful:

3.0 out of 5 stars The book is a survey of a large number of PI defects, August 12, 1999

By A Customer

This review is from: Photo-induced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) (Hardcover)

A large number of photoinduced phenomena associated with the photoinduced (PI) defects creation have been reported in the past. Besides the fundamental interest, these phenomena are practically important due to their influence on the performance and stability of semiconductor devices such as solar cells and laser diodes. The book by Redfield and Bube gives a comprehensive review of the subject. To my opinion the authors review the most important PI defects in crystalline and amorphous semiconductors focusing on the existing models without mathematical complications and emphasizing the need for more sophisticated many electron models.

The authors start with a review of the basic definitions and terminology of metastable defects. Some of the concepts in this chapter were discussed too shortly and it would be much more efficient if more details were given in particular to the audience of new comers to the field and for graduate students. Chapters 2 and 3 deal with defects in crystalline semiconductors with particular attention to DX and EL2 centers in III-V compounds. The bulk of these chapters is devoted mainly to PI defects as observed with electrical properties such as photoconductivity, resistivity and Hall mobility. Photoinduced changes in the optical properties of crystalline semiconductors associated with the defects creation are numerous, but they were ignored in these chapters and the topic is actually missing. A detailed review of the properties of photoinduced defects in hydrogenated amorphous silicon and their kinetics is given in chapters 4 and 5. These two chapters are well organized and informative. In chapter 6, a summary of PI defects in other amorphous semiconductors are summarized. In certain cases such as chalcogenide glasses, this summary is too short when compared to the amount of work done on PI defects in these materials. The last chapter summarizes the effect of PI defects in devices. This chapter is well written and provides a reasonable summary of the main effects, although the book is oriented more to the material aspects than to devices.

In summary the book is a survey of a large number of PI defects in semiconductors. The subject matter is generally well-organized, although many topics were mentioned too briefly and some significant information has been ignored. The amount of references is reasonable, however it is far from being complete and the book has an index. In my opinion the book can be invaluable as an introduction for those who are new to the field and for graduate students.