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Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
 
 
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Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP [Hardcover]

Sadao Adachi (Author)
4.0 out of 5 stars  See all reviews (1 customer review)


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Book Description

0471573299 978-0471573296 September 1, 1992 1
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.


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The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Product Details

  • Hardcover: 336 pages
  • Publisher: Wiley-Interscience; 1 edition (September 1, 1992)
  • Language: English
  • ISBN-10: 0471573299
  • ISBN-13: 978-0471573296
  • Product Dimensions: 9.6 x 6.5 x 1 inches
  • Shipping Weight: 1.4 pounds
  • Average Customer Review: 4.0 out of 5 stars  See all reviews (1 customer review)
  • Amazon Best Sellers Rank: #3,302,798 in Books (See Top 100 in Books)

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4 of 5 people found the following review helpful:
4.0 out of 5 stars A Comprehensive review of concurrent materials, October 8, 2000
By 
Gil Tidhar (Chiaro Networks, JERUSALEM Israel) - See all my reviews
This review is from: Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Hardcover)
Very elaborate review of InP properties. Although GaAs is mentioned in the title - there's very little information about GaAs. Very good literature review for InP and its alloys.
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Inside This Book (learn more)
First Sentence:
The progress made in physics and technology of semiconductors depends mainly on two families of materials: the group IV elements and the III-V compounds. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
numerically calculated spectral dependence, reststrahlen parameters, direct band edge, lattice vibrational properties, optional composition, individual scattering mechanisms, layered tetragonal, lowest direct gap, polar optical scattering, reststrahlen region, initio pseudopotential calculation, electrooptic constants, gap contribution, linear electrooptic effect, heterojunction system, shear deformation potentials, photoelastic coefficients, cleavage energy, alloy scattering, semiconducting alloys, conductivity effective mass, negative differential mobility, linear interpolation scheme, binary masses, highest valence band
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Gax Asy, Status Solidi, Solid State Commun, New York, Solid-State Electron, Institute of Physics, Quantum Electron, Vacuum Sci, Electron Dev, Van Vechten, Monte Carlo, Gaz Asy, Van de Walle, Physical Properties of Crystals, Shubnikov-de Haas
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