This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.
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Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
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polarization induced effects, silicon carbide, compound semiconductors, nitride binary compounds, polarization induced interface charge, surface donor density, polarization doping, bound sheet charge, graded ferroelectrics, basal strain, nitride heterostructures, quantum scattering time, polarization sheet charge, bound interface charge, ferroelectric alloys, hole envelope wave functions, piezoelectric polarization, electron slabs, polarization doped, nanoscale variations, induced interface charges, momentum scattering rate, spontaneous polarization field, surface barrier height, alloy scattering potential Key Phrases - Capitalized Phrases (CAPs): (learn more)
Polarization Effects, Functionally Graded Polar Heterostuctures, Low-Field Transport, Effects of Polarization, Optoelectronic Quantum Structures, Polar Nitride Heterostructures, Electron Devices, Monte Carlo, Electron Device Lett, Theoretical Approach, New York, Jasprit Singh, Madhusudan Singh, Applied Physics Letters, American Physical Society, Della Sala, Solid-State Electron, Cambridge University Press, Academic Press, Electronics Letters, Solid State Physics, Mishra Appl, Solid State Electronics, Van de Walle, Physical Review Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Surprise Me!
polarization induced effects, silicon carbide, compound semiconductors, nitride binary compounds, polarization induced interface charge, surface donor density, polarization doping, bound sheet charge, graded ferroelectrics, basal strain, nitride heterostructures, quantum scattering time, polarization sheet charge, bound interface charge, ferroelectric alloys, hole envelope wave functions, piezoelectric polarization, electron slabs, polarization doped, nanoscale variations, induced interface charges, momentum scattering rate, spontaneous polarization field, surface barrier height, alloy scattering potential Key Phrases - Capitalized Phrases (CAPs): (learn more)
Polarization Effects, Functionally Graded Polar Heterostuctures, Low-Field Transport, Effects of Polarization, Optoelectronic Quantum Structures, Polar Nitride Heterostructures, Electron Devices, Monte Carlo, Electron Device Lett, Theoretical Approach, New York, Jasprit Singh, Madhusudan Singh, Applied Physics Letters, American Physical Society, Della Sala, Solid-State Electron, Cambridge University Press, Academic Press, Electronics Letters, Solid State Physics, Mishra Appl, Solid State Electronics, Van de Walle, Physical Review Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Surprise Me!
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