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Positron Annihilation in Semiconductors: Defect Studies (Springer Series in Solid-State Sciences)
 
 
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Positron Annihilation in Semiconductors: Defect Studies (Springer Series in Solid-State Sciences) [Hardcover]

Reinhard Krause-Rehberg (Author), Hartmut S. Leipner (Author)
5.0 out of 5 stars  See all reviews (1 customer review)

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Book Description

3540643710 978-3540643715 May 21, 2003 Corrected
This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.

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Editorial Reviews

From the Back Cover

The electrical and optical properties of semiconductors are dominated by lattice defects. Positron annihilation has become one of the most important techniques for the investigation of vacancy-like defects. Positrons may be captured in lattice imperfections and the annihilation signal then contains specific information on the type and the concentration of these defects. A comprehensive overview of positron studies in elemental and compound semiconductors is presented. Emphasis is put on investigations of defects in as-grown, electron-irradiated, ion-implanted, and plastically deformed material. It is shown how positrons can be used to profile structural defects in epitaxial layers and at interfaces. Possible applications of positron annihilation in defect engineering are discussed. The theoretical foundations of the interaction of positrons with matter are reviewed. The book describes in detail all important techniques of positron annihilation, such as positron lifetime spectroscopy, Doppler-broadening spectroscopy, the angular correlation of annihilation radiation, positron-beam applications, and also new methods. The sensitivity and selectivity of defect detection by positron annihilation is compared to other characterization methods.

Product Details

  • Hardcover: 394 pages
  • Publisher: Springer; Corrected edition (May 21, 2003)
  • Language: English
  • ISBN-10: 3540643710
  • ISBN-13: 978-3540643715
  • Product Dimensions: 9.5 x 6.5 x 0.8 inches
  • Shipping Weight: 1.5 pounds (View shipping rates and policies)
  • Average Customer Review: 5.0 out of 5 stars  See all reviews (1 customer review)
  • Amazon Best Sellers Rank: #3,160,557 in Books (See Top 100 in Books)

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5.0 out of 5 stars Positron Annihilation Spectroscopy, April 5, 2009
This review is from: Positron Annihilation in Semiconductors: Defect Studies (Springer Series in Solid-State Sciences) (Hardcover)
One of the best books for understanding the basics of Positron annihilation spectroscopy. The author has given a good analysis and review on the defect characterization of semiconductors. I strongly recommend this book for everyone working in PAS studies of semiconductors.
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Inside This Book (learn more)
First Sentence:
The positron as the antiparticle of the electron was predicted by Dirac (1928). Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
shallow positron traps, average positron lifetime, positron bulk lifetime, positron binding energy, incident positron energy, metastable vacancy, main annealing stage, positron trapping, deep positron traps, positron implantation profile, trapping coefficient, annihilation investigations, conventional positron lifetime, deep ground state, positron fit, positron lifetime measurements, positron lifetime spectroscopy, positron diffusion length, isolated monovacancies, vacancy signal, annihilation fraction, annihilation parameters, one defect type, saturated trapping, positron lifetime data
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Sen Gupta, Dissolution Lifetime
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