The first book devoted entirely to HBTs, this book covers the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. The main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. Extensively referenced, with 150 illustrations and 250 equations.
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Inside This Book
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First Sentence:
Despite the higher cost of material and processing, heterojunction bipolar transistors (HBTs) have gained popularity in digital and microwave applications primarily because of their superior speed performance. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
extrinsic base surface, lattice temperature contours, setback layer, collector signal delay time, emitter layer thickness, base pushout, collector leakage currents, graded layer thicknesses, base current density, base current components, surface recombination current, emitter doping concentration, base current densities, emitter perimeter, minimum noise factor, collector current density, base layer thickness, base doping concentration, recombination current density, emitter fingers, high current region, trapping density, homojunction bipolar transistor, collector current densities, emitter injection efficiency Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Devices, New York, Electron Device Lett, Monte Carlo, Artech House, Study of Current Transport, Englewood Cliffs, Lateral Distance New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Despite the higher cost of material and processing, heterojunction bipolar transistors (HBTs) have gained popularity in digital and microwave applications primarily because of their superior speed performance. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
extrinsic base surface, lattice temperature contours, setback layer, collector signal delay time, emitter layer thickness, base pushout, collector leakage currents, graded layer thicknesses, base current density, base current components, surface recombination current, emitter doping concentration, base current densities, emitter perimeter, minimum noise factor, collector current density, base layer thickness, base doping concentration, recombination current density, emitter fingers, high current region, trapping density, homojunction bipolar transistor, collector current densities, emitter injection efficiency Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Devices, New York, Electron Device Lett, Monte Carlo, Artech House, Study of Current Transport, Englewood Cliffs, Lateral Distance New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 20
books:
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4
books
cite this book:
- Advanced Semiconductor Device Physics and Modeling (Artech House Materials Science Library) by Juin J. Liou on 4 pages
- Noise in Solid State Devices and Circuits by Albert Van der Ziel on page 163, and Back Matter
- Vacuum Mechatronics (Artech House Materials Science Library) by Gerardo Beni in Front Matter
- Physics of Semiconductor Devices by Michael Shur on page 130
- Device Electronics for Integrated Circuits by Richard S. Muller on page 55
See all 20 books this book cites
- Sige, GAAS and Inp Heterojunction Bipolar Transistors by Jiann S. Yuan on page 105, and page 279
- Analysis and Design of MOSFETs - Modeling, Simulation, and Parameter Extraction by Juin Jei Liou in Back Matter
- Modern Microwave Transistors: Theory, Design, and Performance by Frank Schwierz on page 462
- in Back Matter
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