Principles of Chemical Vapor Deposition [Hardcover]

D.M. Dobkin (Author), M.K. Zuraw (Author)

Book Description

ISBN-10: 1402012489 | ISBN-13: 978-1402012488 | Publication Date: April 1, 2003 | Edition: 1

Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, and plasma discharge characteristics. In addition, the book includes discussions of practical films and reactors to help in the development of better processes and equipment. This book will assist workers new to chemical vapor deposition (CVD) to understand CVD reactors and processes and to comprehend and exploit the literature in the field. The book reviews several disparate fields with which many researchers may have only a passing acquaintance, such as heat and mass transfer, discharge physics, and surface chemistry, focusing on key issues relevant to CVD. The book also examines examples of realistic industrial reactors and processes with simplified analysis to demonstrate how to apply the principles to practical situations. The book does not attempt to exhaustively survey the literature or to intimidate the reader with irrelevant mathematical apparatus. This book is as simple as possible while still retaining the essential physics and chemistry. The book is generously illustrated to assist the reader in forming the mental images which are the basis of understanding.

Product Details

• Hardcover: 288 pages
• Publisher: Springer; 1 edition (April 1, 2003)
• Language: English
• ISBN-10: 1402012489
• ISBN-13: 978-1402012488
• Product Dimensions: 9.2 x 7 x 0.7 inches
• Shipping Weight: 1.4 pounds (View shipping rates and policies)
• Average Customer Review: 5.0 out of 5 stars  See all reviews (1 customer review)
• Amazon Best Sellers Rank: #1,512,751 in Books (See Top 100 in Books)

More About the Author

Dr. Daniel M. Dobkin has been involved in high-speed communications systems and devices for over three decades. He is the author of technical books on chemical vapor deposition, RF engineering, and RFID, in addition to numerous technical publications. Dr. Dobkin holds seven US patents as inventor or co-inventor. He works as an engineering consultant and technical writer in Sunnyvale, CA.

Customer Reviews

Most Helpful Customer Reviews

7 of 8 people found the following review helpful:

5.0 out of 5 stars CVD Principles and Reactor Technologies - All in One!, June 23, 2004

By A Customer

This review is from: Principles of Chemical Vapor Deposition (Hardcover)

The book is a wonderful treatise on the topic of Chemical Vapor Deposition. It provides not only a sound understanding of the state-of-the art technology involved in CVD for contemporary microelectronic applications, but also enunciates the basic principles and fundamental physical laws which are necessary for a detailed understanding of the subject. I found the informal pedagogy scheme followed by the authors as an useful approach, making the complex topic interesting, while at the same time the text equips the reader with the terminology which constitutes the technical parlance on the subject. For example, the authors have (thankfully) clarified and clearly defined various terms (to mention a few) like `sccm', `diffusion length', `step coverage', `reactive sticking coefficient', `gap filling', and the various dimensionless numbers including Reynold's number, Peclet number and Knudsen number- all of which are of routine utility for the practicing technologist, but unfortunately are often not addressed in a single text on the subject.

The book addresses the various reactor technologies involved in CVD, along with the system configurations. While on the one hand, it introduces the reader to the various essential system modules and their functions in the CVD process, on the other hand, it outlines the basic physical and-chemical laws which define the different elements of the CVD reactor. The chemistry, kinetics and reaction mechanisms of silicon-dioxide and silicon-nitride deposition are covered in much detail, giving valuable insight into these two applications. Various other CVD films of importance to microelectronics are covered as well. The coverage is comprehensive, and the wide range of topics that the authors have beautifully brought together makes it an optimal introduction to the understanding of physical laws, and their application in CVD technology.

The idiom of the text makes it an easy, yet highly informative compilation on CVD. Process engineers, researchers, reactor designers and practicing technologists should find the detail covered in the book to be very useful. This book bridges the gap between core fundamental laws and their application in CVD technology.