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Properties of Advanced Semiconductor Materials: GaN, A1N, InN, BN, SiC, SiGe [Hardcover]

Michael E. Levinshtein (Editor), Sergey L. Rumyantsev (Editor), Michael S. Shur (Editor)

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Book Description

ISBN-10: 0471358274 | ISBN-13: 978-0471358275 | Publication Date: February 21, 2001 | Edition: 1st

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material.
* Reviews traditional semiconductor materials as well as new, advanced semiconductors.
* Essential authoritative handbook on the properties of semiconductor materials.

#outer_postBodyPS { display: none; } #psGradient { display: none; } #psPlaceHolder { display: none; } #psExpand { display: none; } Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material.
* Reviews traditional semiconductor materials as well as new, advanced semiconductors.
* Essential authoritative handbook on the properties of semiconductor materials.

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Editorial Reviews

Review

"Six contributed chapters describe the key properties of emerging semiconductor materials systems with exciting potential..." (SciTech Book News, Vol. 25, No. 2 June 2001)

"Anyone working with these materials will find the up-to-date information summarized in this handbook extremely useful and handy...this handbook has the potential to become on of the most cited reference books in upcoming years." (MRS Bulletin, September 2001)

Product Details

Hardcover: 216 pages
Publisher: Wiley-Interscience; 1st edition (February 21, 2001)
Language: English
ISBN-10: 0471358274
ISBN-13: 978-0471358275
Product Dimensions: 9.5 x 6.4 x 0.7 inches
Shipping Weight: 1.1 pounds (View shipping rates and policies)
Amazon Best Sellers Rank: #2,509,470 in Books (See Top 100 in Books)

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Front Cover | Table of Contents | First Pages | Back Cover | Surprise Me!

Inside This Book (learn more)

First Sentence:
Band structure of wurtzite GaN. Read the first page

Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
inverse electric field, surface microhardness, optical branch phonons, state drift velocity, hole ionization rates, equivalent valleys, pyramid test, radiative recombination coefficient, different doping levels, zinc blende, band discontinuities, intrinsic carrier concentration, photon energy, band density

Key Phrases - Capitalized Phrases (CAPs): (learn more)
Lattice Vibrations, Other Properties, Related Materials, Datareviews Series, Gallium Nitride, Elsevier Science, John Wiley, New York, Phys Rev, Piezoelectric Constants, Properties of Advanced Semiconductor Materials, Properties of Group, Plenum Press, Recombination Parameters, Soviet Phys, Electron Der, High Electric Field, Material Research Society Symposium Proceedings, Solid State Electronics, Thin Solid Films

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Front Cover | Table of Contents | First Pages | Back Cover | Surprise Me!

Citations (learn more)

This book cites 10 books:

Properties of Strained and Relaxed Silicon Germanium (E M I S Datareviews Series) by Erich Kasper on page 185, page 186, and Back Matter
Solid State Physics: Advances in Research and Applications, Vol. 32 by Henry Ehrenreich on page 29, and page 146
Properties of Silicon Carbide (E M I S Datareviews Series) by Gary L. Harris on page 143, and Back Matter
Thermochemical Properties of Inorganic Substances by Ottmar Knacke on page 27
The Blue Laser Diode: The Complete Story by Shuji Nakamura in Back Matter

See all 10 books this book cites

Books on Related Topics (learn more)

The Science and Engineering of Microelectronic Fabrication by Stephen A. Campbell

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