This volume contains papers delivered at a NATO Advanced Research Workshop and provides a broad introduction to all major aspects of quantum dot structures. Such structures have been produced for studies of basic physical phenomena, for device fabrication and, on a more speculative level, have been suggested as components of a solid-state realization of a quantum computer. The book is structured so that the reader is introduced to the methods used to produce and control quantum dots, followed by discussions of their structural, electronic, and optical properties. It concludes with examples of how their optical properties can be used in practical devices, including lasers and light-emitting diodes operating at the commercially important wavelengths of 1.3 µm and 1.55 µm.
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First Sentence:
The InAs-GaAs heteroepitaxial system has a lattice mismatch of = 7% and under very specific conditions the growth mode follows a version of the Stranski-Krastanov (SK) mechanism, which results in the formation of coherent (dislocation-free) three-dimensional (3D) islands, after the growth of between one and two monolayers (MLs) in a two dimensional (2D) layer-by-layer pseudomorphic mode. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
uncapped islands, islanding transition, chemically synthesized nanocrystals, electron spatial distribution, residual elastic strain, wetting parameter, growth mode transition, wetting layer, dome islands, adatom population, quantum dot formation, coupled quantum dots, silicon quantum dots, strained islands, semiconductor heteroepitaxy, coherent islands, island composition, indirect optical transition, quantum dot molecule, density isosurfaces, mismatched heteroepitaxy, island size distribution, pyramid islands, elastic strain relaxation, island density Key Phrases - Capitalized Phrases (CAPs): (learn more)
Monte Carlo, New York, World Scientific, Thin Solid Films, Stranski Krastanov, N-electron Wigner New!
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The InAs-GaAs heteroepitaxial system has a lattice mismatch of = 7% and under very specific conditions the growth mode follows a version of the Stranski-Krastanov (SK) mechanism, which results in the formation of coherent (dislocation-free) three-dimensional (3D) islands, after the growth of between one and two monolayers (MLs) in a two dimensional (2D) layer-by-layer pseudomorphic mode. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
uncapped islands, islanding transition, chemically synthesized nanocrystals, electron spatial distribution, residual elastic strain, wetting parameter, growth mode transition, wetting layer, dome islands, adatom population, quantum dot formation, coupled quantum dots, silicon quantum dots, strained islands, semiconductor heteroepitaxy, coherent islands, island composition, indirect optical transition, quantum dot molecule, density isosurfaces, mismatched heteroepitaxy, island size distribution, pyramid islands, elastic strain relaxation, island density Key Phrases - Capitalized Phrases (CAPs): (learn more)
Monte Carlo, New York, World Scientific, Thin Solid Films, Stranski Krastanov, N-electron Wigner New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Back Cover | Surprise Me!
Citations (learn more)
This book cites 24
books:
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- Quantum Dot Heterostructures by Dieter Bimberg on page 20, page 118, and page 205
- Microscopy of Semiconducting Materials: 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK (Institute of Physics Conference Series) by A.G Cullis on page 85, and page 88
- Atomistic Aspects of Epitaxial Growth (NATO Science Series II: Mathematics, Physics and Chemistry) by Miroslav Kotrla on page 39, and page 101
- Properties of Porous Silicon (Emis Datareviews) by Leigh Canham on page 374, and page 375
- Theory of Elasticity, Third Edition: Volume 7 (Theoretical Physics) by L D Landau on page 87
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