First Sentence:
The amount of radiation that semiconductor devices and materials encounter during their lifecycle strongly depends on the radiation environment and their operating conditions.
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Key Phrases - Statistically Improbable Phrases (SIPs):
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carrier removal rate, stable radiation defects, basic radiation defects, neutron radiation effects, lifetime damage factor, ionisation damage, primary radiation defects, silicon radiation detectors, static current gain, current gain degradation, more radiation tolerant, single event gate rupture, irradiation bias, radiation damage mechanisms, total dose effects, space solar cells, placement damage, irradiated silicon, proton fluence, cluster damage, room temperature irradiation, depletion voltage, implant isolation, proton damage, spacer oxides
Key Phrases - Capitalized Phrases (CAPs):
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After Ohyama, After Ceschia, After Papastamatiou, After Schmidt, Monte Carlo, After Nowlin, After Watkins, After Babcock, After Kosier, After Shaneyfelt, After Zhao, Van Allen, After Chang, After Flament, After Mallik, After Papaioannou, After Rax, After Shaw, After Yount, After Barry, After Bloss, After Burkig, After Dunn, After Evans, After Goodman
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