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Radio Frequency Transistors, Second Edition: Principles and Practical Applications (EDN Series for Design Engineers)
 
 

Radio Frequency Transistors, Second Edition: Principles and Practical Applications (EDN Series for Design Engineers) [Paperback]

Norman Dye (Author), Helge Granberg (Author)
5.0 out of 5 stars  See all reviews (2 customer reviews)

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Book Description

0750672811 978-0750672818 February 6, 2001 2
Radio Frequency Transistors: Principles and Practical Applications is a complete tool kit for successful RF circuit design. As cellular and satellite communications fields continue to expand, the need for RF circuit design grows. Radio Frequency Transistors contains a wealth of practical design information based on years of experience from authors who have worked with the leading manufacturers of RF components. The book focuses primarily on the more difficult area of high power transistor amplifier design and construction.



An entire chapter devoted solely to LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar transistors, showing clearly why LDMOS is the designer's choice for high power, linear amplifiers in today's rapidly expanding digital world of communications. Coverage also includes applications of LDMOS RF high power transistors in current generation cellular technologies, the design of LDMOS high power amplifiers, and comments about the latest efforts to model LDMOS RF power devices.

Other topics covered include the selection of matched high power RF transistors, input impedance matching of high power transistors, interstage matching, and capacitors and inductors at radio frequencies.



Fully updated to include the newest cutting edge technology of RF circuit design.
Contains practical, hands-on design advice to help you save time, money and resources
Written by engineers for engineers to use in the field.

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Editorial Reviews

Review

...a complete tool kit for RF circuit design. -RF Globalnet

About the Author

Motorola --This text refers to an out of print or unavailable edition of this title.

Product Details

  • Paperback: 320 pages
  • Publisher: Newnes; 2 edition (February 6, 2001)
  • Language: English
  • ISBN-10: 0750672811
  • ISBN-13: 978-0750672818
  • Product Dimensions: 10 x 7 x 0.7 inches
  • Shipping Weight: 1.2 pounds (View shipping rates and policies)
  • Average Customer Review: 5.0 out of 5 stars  See all reviews (2 customer reviews)
  • Amazon Best Sellers Rank: #665,791 in Books (See Top 100 in Books)

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Most Helpful Customer Reviews

9 of 9 people found the following review helpful:
5.0 out of 5 stars A comprehensive guide for Highpower HF Amplifier Design, April 15, 2000
This is one fine book that deals with all the thoretical,practical and thermal aspects of Highpower Broadband amplifiers using Solidstate devices. Eventhough the examples and discussions are centered mainly around the Motorola RF Transistors,the principles can be extended to semiconductor devices manufactured by any manufacturer.The authors have dealt with the subject matter in a thorough and a very easy to understand manner.I have been reading H.O.Granberg's articles in QST,RF Design and Motorola Application Notes since the early 80s as they were always packed with his tremendous experience in the field of Solidstate RF design. No matter whether you are a professional designer or an advanced radio amateur, you are sure to find it a gem in your collection of technical books.
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2 of 2 people found the following review helpful:
5.0 out of 5 stars first edition of a book that now is in the second edition, March 5, 2006
By 
it (Sunnyvale, CA USA) - See all my reviews
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This book has been revised and updated in a second edition. I suggest that you either buy this book used or the second edition new depending upon your needs and finances.

This book bridges the gap between school theory and practice in RF power amplifier design and construction. This is the best book on the subject that I have seen in 40 years.
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Inside This Book (learn more)
First Sentence:
Data sheets are often the sole source of information about the capability and characteristics of a product. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
internal matching network, equal delay transformers, twisted wire transformers, transistor housing, emitter ballast resistors, multiturn winding, narrow band circuits, low power transistors, transistor die, gain circle, wideband transformers, frequency transistors, load mismatch, interstage matching, impedance winding, ruggedness test, common base circuits, source reflection coefficient, balancing resistors, minimum noise figure, device data sheets, input return loss, electrical size, power amplifier design, input matching network
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Radio Frequency Transistors, Smith Chart, Application Note, New York, Application Reports, Motorola Semiconductor Sector, Discrete Semiconductor Group, Ericsson Microelectronics, Applications Laboratory Report, Palo Alto, Technical Series, Acrian Power Solutions, Data Book, Motorola Semiconductor Products Sector, Other Factors Affecting Amplifier Design, San Jose, The Acrian Handbook, Englewood Cliffs, Expo West, Gain Compression Point, John Wiley, Philips Components, After the Power Amplifier, Building Push-Pull Multioctave, Communications Transistor Company
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