Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Rapid Thermal Processing of Semiconductors (Microdevices)
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Inside This Book
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First Sentence:
Photon, electron, and ion beam interactions with solids provide a wide range of physical and chemical effects which depend on the nature of the irradiated materials as well as the characteristics of the radiation. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
conventional furnace experiments, heat balance regime, thermal processing chemical vapor deposition, electron depth profiles, gallium arsenide implanted, nonequilibrium interstitials, rapid thermally grown oxides, sheet resistivity variation, thermal processing regimes, doped layer depth, furnace oxides, using rapid thermal processing, transient thermal processing, rapid thermal oxides, nonequilibrium point defects, rapid thermal cleaning, disilicide formation, rapid isothermal processing, silicide layer growth, rapid thermal nitridation, rapid thermal oxidation, rapid thermal diffusion, rapid thermal chemical vapor deposition, diffusion synthesis, nitridation time Key Phrases - Capitalized Phrases (CAPs): (learn more)
Phase Substrate, Gas Refs New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Photon, electron, and ion beam interactions with solids provide a wide range of physical and chemical effects which depend on the nature of the irradiated materials as well as the characteristics of the radiation. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
conventional furnace experiments, heat balance regime, thermal processing chemical vapor deposition, electron depth profiles, gallium arsenide implanted, nonequilibrium interstitials, rapid thermally grown oxides, sheet resistivity variation, thermal processing regimes, doped layer depth, furnace oxides, using rapid thermal processing, transient thermal processing, rapid thermal oxides, nonequilibrium point defects, rapid thermal cleaning, disilicide formation, rapid isothermal processing, silicide layer growth, rapid thermal nitridation, rapid thermal oxidation, rapid thermal diffusion, rapid thermal chemical vapor deposition, diffusion synthesis, nitridation time Key Phrases - Capitalized Phrases (CAPs): (learn more)
Phase Substrate, Gas Refs New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 26
books:
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4
books
cite this book:
- Thin Films: Interdiffusion and Reactions (Electrochemical Society) by John Milo Poate in Back Matter (1), Back Matter (2), and Back Matter (3)
- Rapid Thermal Processing, Volume 84 (European Materials Research Society Symposia Proceedings) by A. Slaoui in Back Matter (1), and Back Matter (2)
- Laser and Electron Beam Processing of Materials by C. White in Back Matter (1), and Back Matter (2)
- Handbook of Thin Film Technology (McGraw-Hill Handbooks) by Leon I. Maissel in Back Matter (1), and Back Matter (2)
- Lattice Defects of Semiconductors by Ryukiti R. Hasiguti in Back Matter (1), and Back Matter (2)
See all 26 books this book cites
- The Science and Engineering of Microelectronic Fabrication by Stephen A. Campbell on page 145
- New Developments in Porous Silicon: Relation with Other Nanostructured Porous Materials, Volume 67 (European Materials Research Society Symposia Proceedings) by L.T. Canham on page 206
- Physical Vapor Deposition of Thin Films by John E. Mahan on page 75
- Semiconductor Quantum Well Intermixing: Material Properties and Optoelectronic Applications (Optoelectronic Properties of Semiconductors and Superlattices) by J. T. Lie on page 264
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