Focusing on helping researchers and engineers involved in III-V compound semiconductor thin film growth and processing, this text shows the mechanism of degradation, detailing the major degradation modes of optical devices fabricated from three different systems, and describing methods for elimination of defect-generating mechanisms.
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About the Author
Osamu Ueda is a senior researcher at Fujitsu Laboratories Ltd., Japan. He earned his Ph.D. in physical engineering from the University of Tokyo. Dr. Ueda has written more than 100 professional papers and is a member of the Society of Applied Physics, the Society of Electron Microscopy, the Electrochemical Society, and the Materials Research Society.
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Inside This Book
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First Sentence:
Since GaAIAs/GaAs double-heterostructure (DH) lasers were invented in 1970 [1], various III-V optical devices have been developed. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
degraded diodes, nonordered regions, diffuse scattering profile, alloy semiconductors grown, cooling process after growth, multiple stacking faults, phosphorous pressure, strong dark contrast, dislocation glide motion, dark defects, superstructure spots, faulted loops, preferential etchants, rapid degradation due, climb motion, stripe region, two equivalent directions, degraded lasers, dislocation dipoles, native point defects, degraded region, dislocation clusters, catastrophic optical damage, modulated structures, excess point defects Key Phrases - Capitalized Phrases (CAPs): (learn more)
Quantum Electron, Status Solidi, New York, Solid State Electron, Local Very, Ge-doped Gao, Crystals Figure, Nonstructural Uniform New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Since GaAIAs/GaAs double-heterostructure (DH) lasers were invented in 1970 [1], various III-V optical devices have been developed. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
degraded diodes, nonordered regions, diffuse scattering profile, alloy semiconductors grown, cooling process after growth, multiple stacking faults, phosphorous pressure, strong dark contrast, dislocation glide motion, dark defects, superstructure spots, faulted loops, preferential etchants, rapid degradation due, climb motion, stripe region, two equivalent directions, degraded lasers, dislocation dipoles, native point defects, degraded region, dislocation clusters, catastrophic optical damage, modulated structures, excess point defects Key Phrases - Capitalized Phrases (CAPs): (learn more)
Quantum Electron, Status Solidi, New York, Solid State Electron, Local Very, Ge-doped Gao, Crystals Figure, Nonstructural Uniform New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 33
books:
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- Theory of Elasticity, Third Edition: Volume 7 (Theoretical Physics) by L D Landau on page 209, and page 296
- Experimental High-Resolution Electron Microscopy (Monographs on the Physics and Chemistry of Materials) by John C.H. Spence on page 74
- Optoelectronic Techniques for Microwave and Millimeter-Wave Engineering (Artech House Optoelectronics Library) by William M. Robertson in Back Matter
- Optical Document Security, Third Edition by Rudolf L. Renesse in Back Matter
- Germanate Glasses: Structure, Spectroscopy and Properties (Artech House Optoelectronics Library) by Alfred Margaryan in Back Matter
See all 33 books this book cites
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