The definitive reference on semiconductor characterization tools! Here, in one well-organized volume, are detailed explanations of the advanced and "traditional") techniques for evaluating virtually every criterion: crystal defects, impurity concentration, lifetime, film thickness, resistivity, and such critical electrical properties as mobility, Hall effect, and conductivity type. Reliable, high-accuracy methods of measuring hardness, stress, and various kinds of surface contamination are also included. In addition to its value as a practical everyday reference, the text also serves as an excellent user's guide to the latest methods of optical microscopy, scanning electron microscopy (SEM), electron microprobe analysis, transmission electron microscopy (TEM), Auger electron spectroscopy (AES), scanning probe microscopy (SPM), and secondary ion mass spectrometry (SIMS). This is the only guide that offers such "dual coverage" of its topic -- in terms of both measurements and tools.
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The definitive reference on semiconductor characterization tools! Semiconductor Measurements & Instrumentation, Second Edition. This fully updated edition of the classic reference incorporates all the new approaches and tools for semiconductor material characterization that have been developed to accomodate ever-shrinking semiconductor geometries. Here, in one well-organized volume, are detialed explanations of the advanced techniques for evaluating virtually every criterion: crystal defects, impurity concentration, lifetime, film thickness, resistivity, and such critical electrical properties as mobility, Hall effect, and conductivity type. Reliable, high-accuracy methods of measuring hardness, stress, and various kinds of surface contamination are also included. In addition to its value as a practical everyday reference, the text also serves as an excellent user's guide to the latest methods of optical microscopy, scanning electron microscopy (SEM), electron microprobe analysis, transmission electron microscopy (TEM), Auger electron spectroscopy (AES), scanning probe microscopy (SPM), and secondary ion mass spectrometry (SIMS). As the only guide that offers such "dual coverage" of its topic--in terms of both measurements and tools--and this timely and thorough reference is sure to be of considerable ongoing benefit to solid state and semiconductor engineers.
About the Author
W. R. Runyan (Dallas, TX) has nearly 30 years of experience in industrial semiconductor processing. T. J. Shaffner (Dallas, TX) is manager of the Materials Characterization Branch in Corporate R&D for Texas Instruments.
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0 of 1 people found the following review helpful:
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useful variety of instruments and measurements,
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This review is from: Semiconductor Measurements and Instrumentation (Hardcover)
Don't be put off by the fact that the book was written in 1998. While Moore's Law is still ongoing in the semiconductor industry, much of the book's material is quite up to date. The measurement techniques are mostly fundamental. Runyan describes the many different properties of a semiconductor chip and how you can measure these. This is then related to how best the chip can be characterised. Or, in some cases, a given circuit.
Accompanying this is a natural complementary description of a variety of instruments. So the ideas behind such devices as a TEM or an SEM are explained. The quantum mechanical aspect of some of the measurements is gone into only slightly. Mostly directed at the experimentalist.
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Inside This Book
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First Sentence:
The values obtained when many of the measurements discussed in later chapters are made may depend on the orientation of the crystallographic face on which the measurements are made, and on the direction in which the applied stress (e.g., voltage, force) is applied. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
probe resistivity measurements, global flatness, silicon epitaxial layers, surface photovoltage, etch figures, conductivity mobility, etch pits, circular wafer, sweep voltage, diffracting crystal, crystallographic defects, incident probe, sheet resistance, etch rate, objective aperture, analytical electron microscopy, drift mobility, space charge region, conductivity type, spreading resistance, electron beam induced, carrier diffusion length, recombination lifetime, chemical polishing, twin planes Key Phrases - Capitalized Phrases (CAPs): (learn more)
New York, Solid-State Electron, Texas Instruments Incorporated, Electrochemical Society, John Wiley, Solid State Technol, Academic Press, Scanning Electron Microsc, Interscience Publishers, Plenum Press, Bell System Tech, Electron Devices, Oxford University Press, San Diego, American Institute of Physics, American Vacuum Society, Dover Publications, Optical Engineering Press, Meeting Abstracts, National Bureau of Standards Tech, Philips Res, Reidel Publishing, San Antonio Meeting, Semiconductor Int, Thin Solid Films New!
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The values obtained when many of the measurements discussed in later chapters are made may depend on the orientation of the crystallographic face on which the measurements are made, and on the direction in which the applied stress (e.g., voltage, force) is applied. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
probe resistivity measurements, global flatness, silicon epitaxial layers, surface photovoltage, etch figures, conductivity mobility, etch pits, circular wafer, sweep voltage, diffracting crystal, crystallographic defects, incident probe, sheet resistance, etch rate, objective aperture, analytical electron microscopy, drift mobility, space charge region, conductivity type, spreading resistance, electron beam induced, carrier diffusion length, recombination lifetime, chemical polishing, twin planes Key Phrases - Capitalized Phrases (CAPs): (learn more)
New York, Solid-State Electron, Texas Instruments Incorporated, Electrochemical Society, John Wiley, Solid State Technol, Academic Press, Scanning Electron Microsc, Interscience Publishers, Plenum Press, Bell System Tech, Electron Devices, Oxford University Press, San Diego, American Institute of Physics, American Vacuum Society, Dover Publications, Optical Engineering Press, Meeting Abstracts, National Bureau of Standards Tech, Philips Res, Reidel Publishing, San Antonio Meeting, Semiconductor Int, Thin Solid Films New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 16
books:
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books
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- Frommer's Comprehensive Travel Guide San Diego '95 (Frommer's City Guides) by Alice Garrard on page 105, and page 355
- Juran's Quality Control Handbook by J.M. Juran in Front Matter
- Technology of Proximal Probe Lithography (Spie Institutes for Advanced Optical Technologies, Vol Is 10) by Christie R. K. Marrian on page 398
- Handbook of Semiconductor Electronics by L. P. Hunter on page 136
- Solid State Physics: Advances in Research and Applications, Vol. 32 by Henry Ehrenreich on page 156
See all 16 books this book cites
- Semiconductor Material and Device Characterization by Dieter K. Schroder on 4 pages
- VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition by Sorab K. Ghandhi on page 508, page 654, and page 791
- Advances in Thermoelectric Materials I, Volume 69 (Semiconductors & Semimetals) by Terry Tritt on page 52
- Semiconductor Materials: An Introduction to Basic Principles (Microdevices) by B.G. Yacobi in Back Matter
- Encyclopedia of Chemical Processing and Design: Volume 49 - Safety: OS1A Compliance to Separators: Vertical: Sizing with Computers (Chemical Processing and Design Encyclopedia) by John J. McKetta Jr on page 364
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