Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.
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From the reviews: "This book is a course very well written and comprehensive dedicated to semiconductors. The authors have detailed fundamental concepts from basic physics until research and development topics. ! Important semiconductors properties are summarized in useful tables at the end of the book. To help students to be familiar with the theory, examples are detailed in the text and at the end of each chapter exercises are proposed." (Gregory Guisbiers, Physicalia, Vol. 30 (2), 2008) "This is a classical textbook about the physics of semiconductor devices. It is intended for electrical engineers, but is also useful for young physicists. The book is very clear and covers all the main knowledge necessary for a graduate student in the area of semiconductors ! . It contains many helpful figures, examples and problem sets. This book is also a good guide for teachers. In addition, advanced researchers could use it because the needed information is easy to find and extremely well synthesized." (Mircea Dragoman, Optics and Photonics News, September, 2008)
Review
From the reviews: "This book is a course very well written and comprehensive dedicated to semiconductors. The authors have detailed fundamental concepts from basic physics until research and development topics. … Important semiconductors properties are summarized in useful tables at the end of the book. To help students to be familiar with the theory, examples are detailed in the text and at the end of each chapter exercises are proposed." (Grégory Guisbiers, Physicalia, Vol. 30 (2), 2008) "This is a classical textbook about the physics of semiconductor devices. It is intended for electrical engineers, but is also useful for young physicists. The book is very clear and covers all the main knowledge necessary for a graduate student in the area of semiconductors … . It contains many helpful figures, examples and problem sets. This book is also a good guide for teachers. In addition, advanced researchers could use it because the needed information is easy to find and extremely well synthesized." (Mircea Dragoman, Optics and Photonics News, September, 2008)
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3 of 3 people found the following review helpful
There are many classic books out there for introductory semiconductor device physics written by eminent scholars such as Streetman, Pierret, Neamen and many more. These books were written for Silicon based devices. On the other hand, with the recent research advances in compound semiconductors, it becomes imperative to have a new book which is tuned to the fundamentals required to understand the physics behind these materials and the corresponding devices. This book has indeed been tailor made to meet such demands. The first chapter is an excellent introduction to crystal structures of semiconductors, much better than the earlier mentioned books. But, in my humble opinion, the second chapter takes the cake. I have never come across such an elegant analysis of band structures of devices in a book meant for electrical engineers. Generally, such discussions have been limited to physics textbooks which are not that easy to comprehend. I can go about other chapters to, but then, I believe you have got my point by now. This book treats the material is a totally different style which is very reader friendly.
Another salient feature of this book is the pedagogical tools employed by the authors. Every now and then, by using simple analogies, flowcharts and detailed illustrations, concepts have been nicely explained.
There is another book on compound semiconductor device physics by Sandip Tiwari which is hard to find these days. Moreover, its more inclined towards graduate students than undergraduates and hence expects the reader to have strong fundamentals. Hence, I will recommend that book as a supplement to this one.
So, if you are interested in understanding device physics for both Si based and compound semiconductors, this is an excellent introductory book. Being a doctoral candidate in solid state devices, I believe this book has a unique place in your collection. Also, the authors are really eminent researchers in their fields and this book is indeed a testament to their prowess in this subject.
Another salient feature of this book is the pedagogical tools employed by the authors. Every now and then, by using simple analogies, flowcharts and detailed illustrations, concepts have been nicely explained.
There is another book on compound semiconductor device physics by Sandip Tiwari which is hard to find these days. Moreover, its more inclined towards graduate students than undergraduates and hence expects the reader to have strong fundamentals. Hence, I will recommend that book as a supplement to this one.
So, if you are interested in understanding device physics for both Si based and compound semiconductors, this is an excellent introductory book. Being a doctoral candidate in solid state devices, I believe this book has a unique place in your collection. Also, the authors are really eminent researchers in their fields and this book is indeed a testament to their prowess in this subject.
2 of 3 people found the following review helpful
This is the most carelessly written book I have ever had the misfortune of buying. I consider the publication of this book nearly unethical, as the reader will be misled by errors at all levels, from typos to inconsistent notation to incorrect arguments. For evidence and brevity of such ubiquitous carelessness, suffice it to say that already at page 7 of the text, the authors show a completely wrong suggested structure of fcc and hcp lattices in their Figure 1.5(a) (See Kittel's SSP p15 f19 for correct ordering). Granted, some sections are more sober than others, but unless you want to be picking through mental vomit for fact from fiction, I would not suggest buying this book.
Tons of typos and millions of erros in the whole book. Particularly in chapter 2&4. No derivation for important equations is disgusting not mention even the equations without derivation are also sometimes completely wrong when you refer to other semiconductor books. I can't understand as famous prof from Santa Babara how come did he invent a such disaster? Maybe this is why research university prof only concern on their research or start-ups companies but not teaching or education
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Key Phrases - Statistically Improbable Phrases (SIPs):
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zinc blende, narrow diode, injected minority charge, excess minority charge, strained epitaxy, hole current injected, neutral base width, forward active mode, screening dipole, areal charge density, maximum depletion width, emitter efficiency, conduction bandedge, depletion region edge, bandgap states, diodes and bipolar transistors, base transport factor, valence bandedge, triangular quantum, gate bias, device periphery, long diode, emitter injection efficiency, electric field profile, current gain cutoff frequency Key Phrases - Capitalized Phrases (CAPs): (learn more)
New York, Modular Series, Solid State Devices, Calculate the Fermi, Basic Principles, Physics of Semiconductor Devices, Academic Press, Source Drain, Semiconductor Physics, Cambridge University Press, Early Effect, Springer Verlag, Emitter Base Collector Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Surprise Me!
zinc blende, narrow diode, injected minority charge, excess minority charge, strained epitaxy, hole current injected, neutral base width, forward active mode, screening dipole, areal charge density, maximum depletion width, emitter efficiency, conduction bandedge, depletion region edge, bandgap states, diodes and bipolar transistors, base transport factor, valence bandedge, triangular quantum, gate bias, device periphery, long diode, emitter injection efficiency, electric field profile, current gain cutoff frequency Key Phrases - Capitalized Phrases (CAPs): (learn more)
New York, Modular Series, Solid State Devices, Calculate the Fermi, Basic Principles, Physics of Semiconductor Devices, Academic Press, Source Drain, Semiconductor Physics, Cambridge University Press, Early Effect, Springer Verlag, Emitter Base Collector Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Surprise Me!
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