Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
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Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
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The Wiley Classics Library consists of selected books that have become recognized classics in their respective fields. With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists.
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2 of 2 people found the following review helpful:
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This review is from: MOS (Metal Oxide Semiconductor) Physics and Technology (Hardcover)
This is the quintessential review of the MOS capacitor. Excellently written, thorough and still very current. This text is essential for the bookshelf of all semiconductor scientists and engineers.
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MOS Physics and Technology book review,
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This review is from: MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley Classics Library) (Paperback)
This book focuses on the metal insulator semiconductor (MIS) device physics. As such it goes in to detail at a greater depth than Sze or general SC device physics. It is well written and easy to understand. Good use of appendices for derivations that would bog down the text. The only complaint is that the type (this is a paperback) on some of the symbols is too small to easily read. I have seen the hardback and did not notice that problem with it.
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Inside This Book
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First Sentence:
Control of the electrical properties of the MOS system has been one of the major factors that has led to stable and high performance silicon integrated circuits. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
interface trap level density, interface trap levels, frequency capacitance method, interface trap properties, interface trap level densities, oxide fixed charge density, bulk trap levels, interface trap response, trap admittance, acceptor interface traps, minority carrier response time, gate bias corresponding, charge nonuniformities, elementary capacitors, oxide charge distribution, given band bending, flatband point, donor interface traps, equivalent parallel conductance, interface trap charge density, interface trap sites, time constant dispersion, type interface traps, charged interface traps, negative oxide charge Key Phrases - Capitalized Phrases (CAPs): (learn more)
Solid-State Electron, New York, Electron Devices, After Nicollian, Pergamon Press, Bell Syst, After Powell, After Snow, After Grove, After Goetzberger, Solid-State Commun, Surface Sci, After Ligenza, Electrochemical Society Meeting, General Radio, After Baccarani, After Deuling, After Kriegler, Cox Cox, Extended Abstracts of the May, After Declerck, After Gwyn, After Yon, Van Nostrand, After Brews New!
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Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Control of the electrical properties of the MOS system has been one of the major factors that has led to stable and high performance silicon integrated circuits. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
interface trap level density, interface trap levels, frequency capacitance method, interface trap properties, interface trap level densities, oxide fixed charge density, bulk trap levels, interface trap response, trap admittance, acceptor interface traps, minority carrier response time, gate bias corresponding, charge nonuniformities, elementary capacitors, oxide charge distribution, given band bending, flatband point, donor interface traps, equivalent parallel conductance, interface trap charge density, interface trap sites, time constant dispersion, type interface traps, charged interface traps, negative oxide charge Key Phrases - Capitalized Phrases (CAPs): (learn more)
Solid-State Electron, New York, Electron Devices, After Nicollian, Pergamon Press, Bell Syst, After Powell, After Snow, After Grove, After Goetzberger, Solid-State Commun, Surface Sci, After Ligenza, Electrochemical Society Meeting, General Radio, After Baccarani, After Deuling, After Kriegler, Cox Cox, Extended Abstracts of the May, After Declerck, After Gwyn, After Yon, Van Nostrand, After Brews New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Index | Back Cover | Surprise Me!
Citations (learn more)
This book cites 79
books:
See all 79 books this book cites
- Physics and Technology of Semiconductor Devices (A Wiley International Edition) by A. S. Grove on 8 pages
- Semiconductor Devices: Solutions Manual: Physics and Technology by Simon M. Sze on 5 pages
- Physics of Semiconductor Devices by Simon M. Sze on 5 pages
- SiO2 and its Interfaces: Volume 105 (MRS Proceedings) by S. T. Pantelides on 4 pages
- Characterization of Solid Surfaces by Philip F. Kane on page 421, page 751, and page 828
See all 79 books this book cites
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