Customer Reviews

Sige, GAAS and Inp Heterojunction Bipolar Transistors

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This is an excellent book about the up-to-date HBT technology. The best thing is that you can find anything, from material properties, fabrication, analysis, to device modeling in this book. Highly recommended as a textbook.

I have not bothered to write a review, until now. I want to warn other people not to waste their money on this book (an expensive one) as I did.

The book is nothing but a compilation of large number of (important or unimportant) experimental data from research papers. There is no central flow of thought, no insight of the author to the topics, no theoretical development. The author just quotes experimental data over and over again from papers that measure a variety of variations of the same type of devices. Of course there are some equations in the book, but the author just quote those equations from papers (again) with no derivation, just like the way he quotes all the experimental data.

As a contrast, I want to mention S. M. Sze's famous "Physics of Semiconductor Devices". This book also quotes results from a large number of research papers. But Sze organizes the content in a very systematic manner. He provides good insight and brief theoretical derivation to the topics treated, and use the quoted papers as a means to support the theories. The selection of topics and papers in the book also reflects Sze's outstanding expertise and personal taste in the field. So the quality difference between Sze's and Yuan's is miles long. Note that Sze's is notorious as a textbook for students but is invaluable as a reference for professionals in the field.

If you really want to learn the subject, go for William Liu's "Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs", a five star book.

I used this book as a text for a Heterojunction device class.Although , the book does contain a great deal of useful information , most of it is in the form of statements and data from research publicaions - devoid of any explanation.

Also, we found many serious errors in the text.

Wouldnt recommend as in introductory text to HBTs