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Silicon Carbide: Recent Major Advances (Advanced Texts in Physics) (v. 79) [Hardcover]

Wolfgang J. Choyke (Editor), Hiroyuki Matsunami (Editor), Gerhard Pensl (Editor)


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Book Description

December 5, 2003 3540404589 978-3540404583 1
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

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From the Back Cover

Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.

Product Details

  • Hardcover: 933 pages
  • Publisher: Springer; 1 edition (December 5, 2003)
  • Language: English
  • ISBN-10: 3540404589
  • ISBN-13: 978-3540404583
  • Product Dimensions: 9.5 x 6.3 x 1.6 inches
  • Shipping Weight: 3 pounds
  • Amazon Best Sellers Rank: #3,652,907 in Books (See Top 100 in Books)

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Inside This Book (learn more)
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
gas stream direction, micropipe closing, doping gas concentration, projected probability distribution, relevant charge states, cubic inclusions, basal plane dislocations, silicon vacancy, horizontal hot wall reactor, positron trapping rate, crystals containing stacking faults, wafer warp, bulk electron mobility, terrace nucleation, sic precipitates, silicon self diffusion, incident positron energy, inequivalent lattice sites, substrate bilayer, carbon vacancy, crystal halves, hall effect analysis, high channel mobility, stacking fault formation, band gap states
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Electron Devices, New York, Status Solidi, Electron Device Lett, Materials Research Society, Solid-State Electronics, Device Research Conference, Materials Science Forum, Trans Tech Publications, Fall Meeting, International Conference, International Symp, Academic Press, Cree Inc, Diamond Relat, European Conference, Glenn Research Center, Introduction Silicon, Plenum Press, Springer Proceedings, Electrochemical Soc, Electron Nlicrosc, Institute of Physics Publishing, Insulated-Gate Bipolar Transistor, Swedish Research Council
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